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Unexpected effect of thermal storage observed on SiC power DMOSFET

Published

Author(s)

Zakariae Chbili, Pragya R. Shrestha, Jason P. Campbell, John S. Suehle, Kin P. Cheung, D. E. Ioannou

Abstract

In this paper we report an unexpected improvement in the SiC DMOSFET transistor characteristics after a long temperature treatment at 150 C. The evolution of the device characteristics during a TDDB stress is compared to that after an elevated temperature treatment. The improvement in characteristics after storage at high temperature is believed to be due to instabilities caused by the quality of the SiO2/SiC interface and its large density of defects.
Proceedings Title
Proceedings of the International Conference on Silicon Carbide and Related Materials
Conference Dates
September 29-October 4, 2013
Conference Location
Miyazaki
Conference Title
International Conference on Silicon Carbide and Related Materials 2013

Citation

Chbili, Z. , Shrestha, P. , Campbell, J. , Suehle, J. , Cheung, K. and Ioannou, D. (2013), Unexpected effect of thermal storage observed on SiC power DMOSFET, Proceedings of the International Conference on Silicon Carbide and Related Materials, Miyazaki, -1 (Accessed April 22, 2024)
Created September 29, 2013, Updated October 4, 2017