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Channel Length-Dependent Series Resistance?

Published

Author(s)

Jason P. Campbell, Kin P. Cheung, Serghei Drozdov, Richard G. Southwick, Jason T. Ryan, Tony Oates, John S. Suehle

Abstract

A recently developed series resistance (RSD) extraction procedure from a single nanoscale device is shown to be highly robust. Despite these virtues, the technique unexpectedly results in a channel length-dependent RSD which is observed across a wide range of channel lengths and across many different technologies (SiO2, SiON, and high-k) (see Figs. 1a-f). This observation obviously raises some concerning issues and implications as RSD is universally accepted as channel length-independent. However, careful examination of the RSD extraction procedure as well as comparison between RSD-corrected field effect mobility (uFE) and geometric magnetoresistance mobility (uMR) suggests that this unexpected observation may be valid.
Conference Dates
June 10-11, 2012
Conference Location
Honolulu, HI
Conference Title
2012 Silicon Nanoelectronics Workshop

Citation

Campbell, J. , Cheung, K. , Drozdov, S. , Southwick, R. , Ryan, J. , Oates, T. and Suehle, J. (2012), Channel Length-Dependent Series Resistance?, 2012 Silicon Nanoelectronics Workshop, Honolulu, HI (Accessed August 10, 2022)
Created June 10, 2012, Updated February 19, 2017