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Unusual Bias Temperature Instability in SiC DMOSFET

Published

Author(s)

Zakariae Chbili, Kin P. Cheung, Jason P. Campbell, John S. Suehle, D. E. Ioannou, Aivars Lelis, Sei-Hyung Ryu

Abstract

We observe an unusual instability in the SiC DMOSFET transistor characteristics. From a series of bias conditions at elevated temperatures, we conclude that a high density of hole traps in the oxide near the SiO2/SiC interface are responsible.
Proceedings Title
International Integrated Reliability Workshop Final Report
Conference Dates
October 14-17, 2013
Conference Location
Stanford Sierra Camp, CA
Conference Title
2013 IEEE International Integrated Reliability Workshop

Keywords

SiC, DMOSFET, BTI

Citation

Chbili, Z. , Cheung, K. , Campbell, J. , Suehle, J. , Ioannou, D. , Lelis, A. and Ryu, S. (2014), Unusual Bias Temperature Instability in SiC DMOSFET, International Integrated Reliability Workshop Final Report, Stanford Sierra Camp, CA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=914921 (Accessed March 3, 2024)
Created March 3, 2014, Updated February 19, 2017