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On the “U-Shaped” Continuum of Band Edge States at the Si/SiO2 Interface

Published

Author(s)

Jason T. Ryan, Richard G. Southwick, Jason P. Campbell, Kin P. Cheung, Chadwin Young
Citation
Applied Physics Letters
Volume
99

Citation

Ryan, J. , Southwick, R. , Campbell, J. , Cheung, K. and Young, C. (2011), On the “U-Shaped” Continuum of Band Edge States at the Si/SiO2 Interface, Applied Physics Letters (Accessed October 6, 2024)

Issues

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Created December 1, 2011, Updated February 19, 2017