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Search Publications by: Thomas P. Moffat (Fed)

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Displaying 126 - 150 of 333

Forward Issue on Electrochemical Processing of Interconnects

December 10, 2013
Author(s)
Thomas P. Moffat, Daniel Josell
On-going densification of microelectronics has driven the development of cost effective and reliable processes for fabricating circuitry ranging from nanometer scale trenches and vias for on-chip interconnects to micrometer scale through-silicon-vias (TSV)

Spatial-Temporal Modeling of Extreme Bottom-Up Filling of Through-Silicon-Vias

December 6, 2013
Author(s)
Daniel Wheeler, Thomas P. Moffat, Daniel Josell
Extreme bottom-up superfilling of annular through-silicon-vias (TSV) during copper electrodeposition has been reported wherein metal deposits on the bottom surface of the TSV with negligible deposition on its sidewalls or the field around it. The growth

Electrodeposition of Ternary Pt_(100-x-y)Co_(x)Ni_(y) Alloys

November 7, 2013
Author(s)
Carlos M. Hangarter, Yihua Y. Liu, D. Pagonis, Ugo Bertocci, Thomas P. Moffat
Electrodeposition of ternary Pt_(100-x-y)Co_(x)Ni_(y) alloy films and the respective Pt binary alloys were examined and compared to the characteristics of the constituent elements. The potential dependence of alloy composition, structure and deposition

Superfilling Damascene Trenches with Gold in Sulfite Electrolyte

April 24, 2013
Author(s)
Daniel Josell, Thomas P. Moffat
Superconformal Au deposition is demonstrated in a Na_(3)Au(SO_(3))_(2 -) Na_(2)SO-(3) based electrolyte using underpotential deposited (upd) Pb to catalyze the reduction of Au(SO_(3))_(2)^(3-). Micromolar additions of Pb^(2+) to the electrolyte give rise

Self-terminating Growth of Pt by Electrochemical Deposition

December 7, 2012
Author(s)
Yihua Y. Liu, Dincer Gokcen, Ugo Bertocci, Thomas P. Moffat
A self-terminating rapid electrodeposition process for controlled growth of Pt monolayer films from a K_(2)PtCl_(4)-NaCl electrolyte has been developed that is tantamount to wet atomic layer deposition (ALD). Despite the deposition overpotential being in

Modeling Extreme Bottom-Up Filling of Through Silicon Vias

August 29, 2012
Author(s)
Daniel Josell, Daniel Wheeler, Thomas P. Moffat
Extreme bottom-up superfilling of through silicon vias (TSV) was recently described wherein deposition occurs on the bottom surface of the vias with negligible deposition on their sidewalls or the field around them. The process uses a deposition

In situ stress measurement during electrodeposition of Ni_(x)Pt_(1-x) alloys

June 20, 2012
Author(s)
Jae W. Shin, Carlos M. Hangarter, Ugo Bertocci, Yihua Y. Liu, Thomas P. Moffat, Gery R. Stafford
Stress generation was examined during the electrodeposition of NixPt1-x alloys from 0.5 M NaCl + 3 mM K2PtCl4 + 0.1 M NiCl2 (pH=2.5), using the wafer curvature method, in films measuring less than 50 nm in thickness. Steady state tensile stress, ranging

Electrochemical Micromachining of NiTi Shape Memory Alloys with Ultrashort Voltage Pulses

December 8, 2011
Author(s)
Joseph Maurer, John Hudson, Steven E. Fick, Thomas P. Moffat, Gordon A. Shaw
Electrochemical micromachining (ECMM) with ultrashort voltage pulses has been used to fabricate microstructures on a NiTi shape memory alloy (SMA). Because of its unique properties, NiTi is a desirable material for use in various applications including

Electrodeposition of Pt_(100-x)Pb_(x) Metastable Alloys and Intermetallics

April 4, 2011
Author(s)
Sun M. Hwang, John E. Bonevich, Jae Jeong Kim, Thomas P. Moffat
The electrodeposition of a series of metastable Pt-Pb alloys and intermetallic phases as well as elemental Pt is demonstrated using an acid electrolyte comprised of 0.05 mol/L Pb(ClO_4)_2 and/or 0.001 mol/L K_2PtCl_4. Pt-Pb films were deposited at various