Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Resistance Changes Similar to Ballistic Magnetoresistance in Electrodeposited Nanocontacts

Published

Author(s)

J Mallett, Erik B. Svedberg, H Ettedgui, Thomas P. Moffat, Alexander J. Shapiro, P J. Chen, L Gan

Abstract

We have devloped an electrochemical system to allow the resistance of two metal microelectrodes grown to contact to be established and maintained automatically. A thin-film geometry was used for the microelectrodes to suppress the magnetoresistive artifact possible in a two-wire geometry. The sysyem allows contacts to be maintained at a given resistance for many hours and for contact resistances to be systematically varied between approximately 2Ω and 1KΩ reversibly. In situ magnetoresistance measurements at each of the ten chosen values of initial resistance indicated no significant effect for magnetic fields of +300mT (3000Oe) applied in any orientation.
Citation
Applied Physics Letters
Volume
84
Issue
No. 2

Keywords

electrochemical, magnetoresistive, resistance

Citation

Mallett, J. , Svedberg, E. , Ettedgui, H. , Moffat, T. , Shapiro, A. , Chen, P. and Gan, L. (2004), Resistance Changes Similar to Ballistic Magnetoresistance in Electrodeposited Nanocontacts, Applied Physics Letters (Accessed June 13, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created January 1, 2004, Updated February 17, 2017