Resistance Changes Similar to Ballistic Magnetoresistance in Electrodeposited Nanocontacts

Published

January 1, 2004

Author(s)

J Mallett, Erik B. Svedberg, H Ettedgui, Thomas P. Moffat, Alexander J. Shapiro, P J. Chen, L Gan

Abstract

We have devloped an electrochemical system to allow the resistance of two metal microelectrodes grown to contact to be established and maintained automatically. A thin-film geometry was used for the microelectrodes to suppress the magnetoresistive artifact possible in a two-wire geometry. The sysyem allows contacts to be maintained at a given resistance for many hours and for contact resistances to be systematically varied between approximately 2Ω and 1KΩ reversibly. In situ magnetoresistance measurements at each of the ten chosen values of initial resistance indicated no significant effect for magnetic fields of +300mT (3000Oe) applied in any orientation.

Citation

Applied Physics Letters

Volume

84

Issue

No. 2

Pub Type

Journals

Keywords

electrochemical, magnetoresistive, resistance

Citation

Mallett, J. , Svedberg, E. , Ettedgui, H. , Moffat, T. , Shapiro, A. , Chen, P. and Gan, L. (2004), Resistance Changes Similar to Ballistic Magnetoresistance in Electrodeposited Nanocontacts, Applied Physics Letters (Accessed October 14, 2025)