Artifacts in Ballistic Magnetoresistance Measurements

Published

June 1, 2004

Author(s)

William F. Egelhoff Jr., L Gan, H Ettendgui, Y Kadmon, Cedric J. Powell, P J. Chen, Alexander J. Shapiro, Robert McMichael, J Mallett, Thomas P. Moffat, Mark D. Stiles

Abstract

We have carried out an extensive search for credible evidence to support the existence of a ballistic magnetoresistance (BMR) effect in magnetic nanocontacts. We have investigated both thin-film and thin-wire geometries for both mechanically-formed and electrodeposited nanocontacts. We find no systematic differences between mechanically-formed and electrodeposited nanocontacts. The samples we have investigated include mechanical contacts between ferromagnetic wires, electrodeposited nanocontacts between ferromagnetic wires, ferromagnetic nanocontacts electrodeposited on Cu wires, nanocontacts electrodeposited between ferromagnetic films anchored on wafers, ferromagnetic nanocontacts electrodeposited on Cu films anchored on wafers, nanocontacts between two ferromagnetic films connected by a pinhole through an insulating film, and nanocontacts formed by focused ion-beam etching. In none of these samples did we find credible evidence for a BMR effect. However, we did find a number of artifacts due to magnetostrictive, magnetostatic, and magnetomechanical effects that can mimic BMR.

Citation

Journal of Applied Physics

Volume

95

Issue

11

Pub Type

Journals

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Keywords

Al, Au, Co, Cu, Fe, Ni, oxidation barrier, Ta films

Citation

Egelhoff Jr., W. , Gan, L. , Ettendgui, H. , Kadmon, Y. , Powell, C. , Chen, P. , Shapiro, A. , McMichael, R. , Mallett, J. , Moffat, T. and Stiles, M. (2004), Artifacts in Ballistic Magnetoresistance Measurements, Journal of Applied Physics, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=620557 (Accessed October 13, 2025)