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Search Publications by: Richard A. Allen (Fed)

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Displaying 51 - 75 of 133

Extraction of Sheet Resistance and Linewidth from All-Copper ECD Test-Structures Fabricated from Silicon Preforms

March 22, 2007
Author(s)
Byron J. Shulver, Andrew S. Bunting, Alan Gundlach, Les I. Haworth, Alan W. Ross, A. J. Smith, Anthony J. Snell, J. T. Stevenson, Anthony Walton, Michael W. Cresswell, Richard A. Allen
Test Structures for the extraction of Electrical Critical Dimensions (ECD) and having all-copper features with no barrier metal films have been fabricated. The advantage of this approach is that electrical measurements provide a non-destructive method for

Study of Test Structures for Use as Reference Material in Optical Critical Dimension Applications

March 22, 2007
Author(s)
Richard A. Allen, Heather Patrick, Michael Bishop, Thomas Germer, Ronald G. Dixson, William Gutherie, Michael W. Cresswell
Optical critical dimension (OCD) metrology has rapidly become an important technology in supporting the worldwide semiconductor industry. OCD relies on a combination of measurement and modeling to extract the average dimensions of an array of identical

A New Critical Dimension Metrology for Chrome-on-Glass Substrates Based ons-Parameter Measurements Extracted from Coplanar Waveguide Test Structures

October 1, 2006
Author(s)
Chidubem Nwokoye, Mona E. Zaghloul, Michael W. Cresswell, Richard A. Allen, Christine E. Murabito
In mask fabrication, Critical Dimension (CD) metrology is conducted by optical transmission, Scanning Electron Microscopy (SEM), and Atomic Force Microscopy (AFM) tools. All these have different advantages and limitations. The work reported here is the

The Study of the U.S. Measurement System for Micro Nano Technologies

September 1, 2006
Author(s)
Richard A. Allen, Craig McGray, Michael Gaitan
The National Institute of Standards and Technology (NIST) has launched an ambitious assessment of the nation''s decentralized measurement system, that is far more encompassing than the few studies done over the last several decades. The aim is to determine

Modeling and Simulation of Nanometer Scale Copper Resistivity

July 1, 2006
Author(s)
Emre Yarimbiyik, Harry A. Scahfft, Richard A. Allen, Mona E. Zaghloul
A highly flexible simulation program to calculate the resistivity of thin films and lines with various line widths has been developed. The program takes into account the effect of surface and grain boundary scatterings, as well as temperature, on

RM 8111: Development of a Prototype Linewidth Standard

May 1, 2006
Author(s)
Michael W. Cresswell, William Gutherie, R. Dixon, Richard A. Allen, Christine E. Murabito, Joaquin (. Martinez
Staff of the Semiconductor Electronics Division, the Information Technology Laboratory, and the Precision Engineering Laboratory at NIST, in collaboration with VLSI Standards, Inc., of San Jose, California, have developed a new generation of prototype

Design and Fabrication of a Copper Test Structure as a Electrical Critical Dimension Reference

April 1, 2006
Author(s)
Byron J. Shulver, Andrew S. Bunting, Alan Gundlach, Les I. Haworth, Alan W. Ross, Anthony J. Snell, J. T. Stevenson, Anthony Walton, Richard A. Allen, Michael W. Cresswell
A novel copper damascene process is reported for the implementation of Electrical Critical Dimension (ECD) reference material. The method of fabrication first creates an initial 'silicon preform' whose linewidth is transfered into a trench using a silicon

Traceable Atomic Force Microscope Dimensional Metrology at NIST

March 1, 2006
Author(s)
Ronald G. Dixson, Ndubuisi G. Orji, Joseph Fu, Michael W. Cresswell, Richard A. Allen, William F. Guthrie
The National Institute of Standards and Technology (NIST) has a multifaceted program in atomic force microscope (AFM) dimensional metrology. There are two major instruments being used for traceable measurements at NIST. The first is a custom in-house

Nano- and Atomic-Scale Length Metrology

January 1, 2006
Author(s)
Theodore V. Vorburger, Ronald G. Dixson, Joseph Fu, Ndubuisi George Orji, Shaw C. Feng, Michael W. Cresswell, Richard A. Allen, William F. Guthrie, Wei Chu
We discuss nano-scale length metrology of linewidth, step height, and line edge roughness (LER). These properties are of growing importance to the function and specification of semiconductor devices as the dimensions of semiconductor devices shrink to the

Resistivity of Nanometer-Scale Films and Interconnects: Model and Simulation

October 20, 2005
Author(s)
Emre Yarimbiyik, Harry A. Schafft, Richard A. Allen, Mona Zahgoul, David L. Blackburn
We have developed a highly versatile simulation program for examining the impact of reduced dimensions on resistivity that goes beyond the work of others, e.g. Fuchs [1] and Mayadas and Shatzkes [2]. The program can simulate the effects of surface and

Critical Dimension Reference Features with Sub-Five Nanometer Uncertainty

May 30, 2005
Author(s)
Michael W. Cresswell, Ronald G. Dixson, William F. Guthrie, Richard A. Allen, Christine E. Murabito, Brandon Park, Joaquin (. Martinez, Amy Hunt
The implementation of a new type of HRTEM-imaging (High-Resolution Transmission Electron Microscopy) test structure, and the use of CD-AFM (CD-Atomic Force Microscopy) to serve as the transfer metrology have resulted in reductions in the uncertainties

Comparison of SEM and HRTEM CD-Measurements Extracted from Monocrystalline Tes-Structures Having Feature Linewidths from 40 nm to 240 nm

April 18, 2005
Author(s)
Michael W. Cresswell, Brandon Park, Richard A. Allen, William F. Guthrie, Ronald G. Dixson, Wei Tan, Christine E. Murabito
CD measurements have been extracted from SEM and HRTEM images of the same set of monocrystalline silicon features having linewidths between 40 and 200 nm. The silicon features are incorporated into a new test structure which has been designed to facilitate

Report of Investigation of RM 8111: Single-Crystal Critical Dimension Prototype Reference Materials

March 2, 2005
Author(s)
Michael W. Cresswell, Richard A. Allen, Ronald G. Dixson, William F. Guthrie, Christine E. Murabito, Brandon Park, Joaquin (. Martinez
Staff of the Semiconductor Electronics Division, the Information Technology Laboratory, and the Precision Engineering Laboratory at NIST, in collaboration with VLSI Standards, Inc., of San Jose, California, have developed a new generation of prototype

Non-contact Electrical CD Metrology Sensor for Chrome Photomasks Featuring a Low Temperature Co-fired Ceramic Technology

May 1, 2004
Author(s)
Nadine Guillaume, Richard A. Allen, Michael W. Cresswell, Markku Lahti, Loren W. Linholm, Mona E. Zaghloul
The paper describes a non-contact capacitive-sensor metrology sensor developed to measure minimum feature sizes, also called critical dimensions (CDs), patterned on photomasks that are used in semiconductor device manufacture. Additionally, this paper

Recent Developments in Producing Test-structures for Use as Critical Dimension Reference Materials

March 1, 2004
Author(s)
Richard A. Allen, Ravi I. Patel, Michael W. Cresswell, Christine E. Murabito, Brandon Park, Monica D. Edelstein, Loren W. Linholm
NIST is developing Single-Crystal Critical-Dimension Reference Materials (SCCDRM) which address the need of the semiconductor and semiconductor equipment industries for a well-characterized artifact to serve as the basis for comparing the performance of

Interim Report on Single Crystal Critical Dimension Reference Materials (SCCDRM)

January 1, 2004
Author(s)
Ronald G. Dixson, Michael W. Cresswell, Richard A. Allen, William F. Guthrie, Brandon Park, Christine E. Murabito, Joaquin (. Martinez
The single crystal critical dimension reference materials (SCCDRM) project has been completed, and the samples for the SEMATECH member companies have been released for distribution. The final technology transfer report is currently undergoing revision and