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Extraction of Sheet Resistance and Linewidth from All-Copper ECD Test-Structures Fabricated from Silicon Preforms

Published

Author(s)

Byron J. Shulver, Andrew S. Bunting, Alan Gundlach, Les I. Haworth, Alan W. Ross, A. J. Smith, Anthony J. Snell, J. T. Stevenson, Anthony Walton, Michael W. Cresswell, Richard A. Allen

Abstract

Test Structures for the extraction of Electrical Critical Dimensions (ECD) and having all-copper features with no barrier metal films have been fabricated. The advantage of this approach is that electrical measurements provide a non-destructive method for determining CD values and enable fundamental studies of electron transport in narrow copper features unaffected by the complications of barrier-metal films. This paper reports on the results of various tests which have been conducted to fully evaluate the current design.
Proceedings Title
2007 International Conference on Microlectronic Test Structures
Conference Dates
March 19-22, 2007
Conference Location
Tokyo, 1, JA

Keywords

barrier metal, CD, copper, Integrated circuit, interconnect, metrology, Test Structure

Citation

Shulver, B. , Bunting, A. , Gundlach, A. , Haworth, L. , Ross, A. , Smith, A. , Snell, A. , Stevenson, J. , Walton, A. , Cresswell, M. and Allen, R. (2007), Extraction of Sheet Resistance and Linewidth from All-Copper ECD Test-Structures Fabricated from Silicon Preforms, 2007 International Conference on Microlectronic Test Structures, Tokyo, 1, JA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32582 (Accessed April 14, 2024)
Created March 21, 2007, Updated October 12, 2021