Extraction of Sheet Resistance and Linewidth from All-Copper ECD Test-Structures Fabricated from Silicon Preforms

Published

March 22, 2007

Author(s)

Byron J. Shulver, Andrew S. Bunting, Alan Gundlach, Les I. Haworth, Alan W. Ross, A. J. Smith, Anthony J. Snell, J. T. Stevenson, Anthony Walton, Michael W. Cresswell, Richard A. Allen

Abstract

Test Structures for the extraction of Electrical Critical Dimensions (ECD) and having all-copper features with no barrier metal films have been fabricated. The advantage of this approach is that electrical measurements provide a non-destructive method for determining CD values and enable fundamental studies of electron transport in narrow copper features unaffected by the complications of barrier-metal films. This paper reports on the results of various tests which have been conducted to fully evaluate the current design.

Proceedings Title

2007 International Conference on Microlectronic Test Structures

Conference Dates

March 19-22, 2007

Conference Location

Tokyo, 1, JA

Pub Type

Conferences

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Local Download

Keywords

barrier metal, CD, copper, Integrated circuit, interconnect, metrology, Test Structure

Citation

Shulver, B. , Bunting, A. , Gundlach, A. , Haworth, L. , Ross, A. , Smith, A. , Snell, A. , Stevenson, J. , Walton, A. , Cresswell, M. and Allen, R. (2007), Extraction of Sheet Resistance and Linewidth from All-Copper ECD Test-Structures Fabricated from Silicon Preforms, 2007 International Conference on Microlectronic Test Structures, Tokyo, 1, JA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32582 (Accessed October 17, 2025)