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Implementation of Simulation Program for Modeling the Effective Resistivity of Nanometer Scale Film and Line Interconnects



Emre Yarimbiyik, Harry A. Schafft, Richard A. Allen, Mona Zahgoul, David L. Blackburn


A highly versatile simulation program was developed and used to examine how the resistivity of thin metal films and lines is increased as their dimensions approach and become smaller than the mean free path of electrons in metals such as copper and aluminum. The simulation program is flexible in that it can include the effects of surface and grain-boundary scattering on resistivity either separately or together, and it can simulate the effect on resistivity where each surface of a film or line has a different value for the scattering parameter. The simulation program 1) provides a more accurate calculation of surface scattering effects than that obtained from the usual formulation of Fuchs? theory, 2) calculates grain-boundary effects that are consistent with the theory of Mayadas and Shatzkes, 3) shows that surface and grain-boundary scattering effects are interdependent, and 4) shows that the change in resistivity with temperature begins to increase as dimensions approach the bulk mean free path of the electrons in the metal. This publication contains the full code as well as flowcharts describing the programs.
NIST Interagency/Internal Report (NISTIR) - 7234
Report Number


citical dimension, Matthiessen''s rule, modeling, resistivity, scattering, thin film


Yarimbiyik, E. , Schafft, H. , Allen, R. , Zahgoul, M. and Blackburn, D. (2006), Implementation of Simulation Program for Modeling the Effective Resistivity of Nanometer Scale Film and Line Interconnects, NIST Interagency/Internal Report (NISTIR), National Institute of Standards and Technology, Gaithersburg, MD, [online],, (Accessed April 20, 2024)
Created January 31, 2006, Updated October 12, 2021