Implementation of Simulation Program for Modeling the Effective Resistivity of Nanometer Scale Film and Line Interconnects

Published

February 1, 2006

Author(s)

Emre Yarimbiyik, Harry A. Schafft, Richard A. Allen, Mona Zahgoul, David L. Blackburn

Abstract

A highly versatile simulation program was developed and used to examine how the resistivity of thin metal films and lines is increased as their dimensions approach and become smaller than the mean free path of electrons in metals such as copper and aluminum. The simulation program is flexible in that it can include the effects of surface and grain-boundary scattering on resistivity either separately or together, and it can simulate the effect on resistivity where each surface of a film or line has a different value for the scattering parameter. The simulation program 1) provides a more accurate calculation of surface scattering effects than that obtained from the usual formulation of Fuchs? theory, 2) calculates grain-boundary effects that are consistent with the theory of Mayadas and Shatzkes, 3) shows that surface and grain-boundary scattering effects are interdependent, and 4) shows that the change in resistivity with temperature begins to increase as dimensions approach the bulk mean free path of the electrons in the metal. This publication contains the full code as well as flowcharts describing the programs.

Citation

NIST Interagency/Internal Report (NISTIR) - 7234

Report Number

7234

NIST Pub Series

NIST Interagency/Internal Report (NISTIR)

Pub Type

NIST Pubs

Download Paper

https://doi.org/10.6028/NIST.IR.7234

Local Download

Keywords

citical dimension, Matthiessen''s rule, modeling, resistivity, scattering, thin film

Citation

Yarimbiyik, E. , Schafft, H. , Allen, R. , Zahgoul, M. and Blackburn, D. (2006), Implementation of Simulation Program for Modeling the Effective Resistivity of Nanometer Scale Film and Line Interconnects, NIST Interagency/Internal Report (NISTIR), National Institute of Standards and Technology, Gaithersburg, MD, [online], https://doi.org/10.6028/NIST.IR.7234, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32006 (Accessed October 13, 2025)