Extraction of Critical Dimension Reference Feature CDs from New Test Structure Using HRTEM Imaging

Published

April 18, 2005

Author(s)

Richard A. Allen, Amy Hunt, Christine E. Murabito, Brandon Park, William F. Guthrie, Michael W. Cresswell

Abstract

NIST has an ongoing effort to provide the semiconductor industry with critical dimension CD reference materials, using the silicon (111) lattice spacing as a reference to establish the linewidth. Recent developments include both a new test structure design as well as changes to the HRTEM sample preparation and fringe counting procedures. These changes are expected to contribute to an improvement over earlier work in which overall uncertainties of 10 nm - 15 nm were observed for approximately 100 nm wide features.

Proceedings Title

ICMTS IEEE International Conference on Microelectronic Test Structures

Conference Dates

April 4-7, 2005

Conference Location

Leuven, 1, BE

Pub Type

Conferences

Keywords

critical dimension (CD), high resolution transmission electron microscopy (HRTEM), linewidth, reference material, test structure, very large scale integration (VLSI)

Citation

Allen, R. , Hunt, A. , Murabito, C. , Park, B. , Guthrie, W. and Cresswell, M. (2005), Extraction of Critical Dimension Reference Feature CDs from New Test Structure Using HRTEM Imaging, ICMTS IEEE International Conference on Microelectronic Test Structures, Leuven, 1, BE (Accessed October 27, 2025)