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Nano- and Atomic-Scale Length Metrology

Published

Author(s)

Theodore V. Vorburger, Ronald G. Dixson, Joseph Fu, Ndubuisi George Orji, Shaw C. Feng, Michael W. Cresswell, Richard A. Allen, William F. Guthrie, Wei Chu

Abstract

We discuss nano-scale length metrology of linewidth, step height, and line edge roughness (LER). These properties are of growing importance to the function and specification of semiconductor devices as the dimensions of semiconductor devices shrink to the 50 nm level and below.  The ability to manufacture ever smaller linewidths leads to semiconductor elements with increasing speed and storage density, but excessive LER can inhibit progress by reducing the quality of the lines.  Both linewidth and LER are specified in the International Technology Roadmap for Semiconductors (ITRS) and both quantities require accurate metrology to determine whether manufacturing specifications are being met. Calibrated step heights provide a source of calibration for measurement of dopant penetration depths and gate oxide thickness, another quantity specified in the ITRS, and enable one to calibrate the z-scale of atomic force microscopes working at high sensitivity.
Proceedings Title
Proceedings of International Symposium on Instrumentation Science and Technology
Conference Dates
August 8-12, 2006
Conference Location
Harbin, 1, CH
Conference Title
International Symposium on Instrumentation Science and Technology

Keywords

atomic force, image stiching, line edge roughness, linewidth, metrology, nano, scanned probe, scanning electron, step height

Citation

Vorburger, T. , Dixson, R. , Fu, J. , Orji, N. , Feng, S. , Cresswell, M. , Allen, R. , Guthrie, W. and Chu, W. (2006), Nano- and Atomic-Scale Length Metrology, Proceedings of International Symposium on Instrumentation Science and Technology, Harbin, 1, CH (Accessed March 1, 2024)
Created December 31, 2005, Updated October 12, 2021