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Test Structures for Study of Electron Transport in Nickel Silicide Features with Linewidths between 40 nm and 100 nm

Published

Author(s)

Bin Li, Li Shi, Paul S. Ho, JiPing Zhou, Richard A. Allen, Michael W. Cresswell

Abstract

A new test structure has been designed and fabricated for the investigation of the effect of linewidth scaling on electron transport in nickel mono-silicide features. In the fabrication process, nickel silicide (NiSi) features were formed by annealing a nickel coating that was deposited on single-crystal silicon features that were as narrow as 100 nm and had vertical and nearly atomically flat sidewalls. The features were patterned on (110) silicon-on-insulator wafers with i-line lithography which replicated a test structure from which V/I measurements could be extracted. Subsequently, the patterning of single-crystal features with direct-write e-beam lithography has been developed to reduce the linewidths of NiSi features to below 40 nm.
Proceedings Title
IEEE ICMTS International Conference on Microelectronic Test Structures
Conference Dates
March 6-9, 2006
Conference Location
Austin, TX, USA

Keywords

annealing, CD, electron-beam lithography, interconnect, KOH, lattice plane selective etching, linewidth, nickel silicide, SIMOX, TMAH

Citation

Li, B. , Shi, L. , Ho, P. , Zhou, J. , Allen, R. and Cresswell, M. (2006), Test Structures for Study of Electron Transport in Nickel Silicide Features with Linewidths between 40 nm and 100 nm, IEEE ICMTS International Conference on Microelectronic Test Structures, Austin, TX, USA (Accessed May 30, 2024)

Issues

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Created March 31, 2006, Updated October 12, 2021