Resistivity of Nanometer-Scale Films and Interconnects: Model and Simulation

Published

October 20, 2005

Author(s)

Emre Yarimbiyik, Harry A. Schafft, Richard A. Allen, Mona Zahgoul, David L. Blackburn

Abstract

We have developed a highly versatile simulation program for examining the impact of reduced dimensions on resistivity that goes beyond the work of others, e.g. Fuchs [1] and Mayadas and Shatzkes [2]. The program can simulate the effects of surface and grain-boundary scattering on the resistivity of thin films and lines, either separately or simultaneously. It is used to understand the importance of grain size and how surface and grain boundary scattering impacts the effective resistivity. It predicts how Matthiessen?s rule will change with decreasing dimensions, which impacts the ability to determine accurately film thickness and line area from resistance measurements taken at two temperatures.

Proceedings Title

IEEE International Integrated Reliability Workshop Final Report

Conference Dates

October 17-20, 2005

Conference Location

Lake Tahoe, CA, USA

Conference Title

IEEE International Integrated Reliability Workshop

Pub Type

Conferences

Keywords

copper, grain boundary scattering, modeling, resistivity, surface scattering, vlsi

Citation

Yarimbiyik, E. , Schafft, H. , Allen, R. , Zahgoul, M. and Blackburn, D. (2005), Resistivity of Nanometer-Scale Films and Interconnects: Model and Simulation, IEEE International Integrated Reliability Workshop Final Report, Lake Tahoe, CA, USA (Accessed December 1, 2024)