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Modeling and Simulation of Nanometer Scale Copper Resistivity

Published

Author(s)

Emre Yarimbiyik, Harry A. Scahfft, Richard A. Allen, Mona E. Zaghloul

Abstract

A highly flexible simulation program to calculate the resistivity of thin films and lines with various line widths has been developed. The program takes into account the effect of surface and grain boundary scatterings, as well as temperature, on resistivity. At thicknesses approximately equal and smaller than the mean free path, the modeled change in resistivity with temperature is no longer constant, which has implications for using Matthiessen's rule for thickness of films and cross section of lines. This program can be used to simulate lines patterned using various techniques, including copper patterned by a damascene process.
Citation
Microelectronics Reliability
Volume
46
Issue
7

Keywords

critical dimension, Matthiessen''s rule, resistivity, scattering, thin film

Citation

Yarimbiyik, E. , Scahfft, H. , Allen, R. and Zaghloul, M. (2006), Modeling and Simulation of Nanometer Scale Copper Resistivity, Microelectronics Reliability (Accessed April 18, 2024)
Created June 30, 2006, Updated October 12, 2021