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Critical Dimension Reference Features with Sub-Five Nanometer Uncertainty

Published

Author(s)

Michael W. Cresswell, Ronald G. Dixson, William F. Guthrie, Richard A. Allen, Christine E. Murabito, Brandon Park, Joaquin (. Martinez, Amy Hunt

Abstract

The implementation of a new type of HRTEM-imaging (High-Resolution Transmission Electron Microscopy) test structure, and the use of CD-AFM (CD-Atomic Force Microscopy) to serve as the transfer metrology have resulted in reductions in the uncertainties attributed to critical dimension (CD) reference-material features, having calibrated CDs less than 100 nm. The previous generation of reference materials, which was field tested in 2001, used electrical CD as the transfer metrology. Calibrated CD values were in the range 80 nm to 150 nm and expanded uncertainties were approximately +/- 14 nm. The second generation units, which have now been distributed to selected industry locations for evaluation, have uncertainties of between +/- 1.5 nm and +/- 4 nm and calibrated CDs as low as 43 nm.
Proceedings Title
SPIE 30th International Symposium Microlithography
Volume
5752
Conference Dates
February 27-March 4, 2005
Conference Location
San Jose, CA, USA
Conference Title
Metrology, Inspection, and Process Control

Keywords

", " "AFM, " "Atomic Force Microscopy, " "calibration, " "HRTEM, " "linewidth, " "MEMS, " "reference material, "CD

Citation

Cresswell, M. , Dixson, R. , Guthrie, W. , Allen, R. , Murabito, C. , Park, B. , Martinez, J. and Hunt, A. (2005), Critical Dimension Reference Features with Sub-Five Nanometer Uncertainty, SPIE 30th International Symposium Microlithography, San Jose, CA, USA (Accessed April 23, 2024)
Created May 29, 2005, Updated October 12, 2021