Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Search Publications

Search Title, Abstract, Conference, Citation, Keyword or Author
  • Published Date
Displaying 551 - 575 of 1445

193 nm scatterfield microscope illumination optics

December 17, 2014
Author(s)
Martin Y. Sohn, Richard M. Silver
A scatterfield microscope for deep sub-wavelength semiconductor metrology using 193 nm light has been designed. In addition to accommodating the fixed numerical aperture and size of its commercial catadioptric objective lens, the illumination optics are

Influence of Metal?MoS2 Interface on MoS2 Transistor Performance: Comparison of Ag and Ti Contacts

December 16, 2014
Author(s)
Hui H. Yuan, Guangjun Cheng, Lin You, Haitao Li, Hao Zhu, Wei Li, Joseph J. Kopanski, Yaw S. Obeng, Angela R. Hight Walker, David J. Gundlach, Curt A. Richter, D. E. Ioannou, Qiliang Li
In this work, we present a study of enhancing MoS2 transistor performance by using proper metal contact. We found that the on-state current of MoS2 field-effect transistors with 30 nm Au/ 30 nm Ag contacts is enhanced more than 60 times and the

Device-Level Experimental Observations of NBTI-Induced Random Timing Jitter

December 13, 2014
Author(s)
Guangfan Jiao, Jiwu Lu, Jason Campbell, Jason Ryan, Kin P. Cheung, Chadwin D. Young, Gennadi Bersuker
This work utilizes device-level eye-diagram measurements to examine NBTI-induced changes in timing jitter at circuit speeds. The measured jitter is examined for a variety of ring-oscillator and pseudo-random gate patterns. The ring-oscillator patterns were

Polarization of Bi2Te3 Thin Film in a Floating-Gate Capacitor Structure

December 8, 2014
Author(s)
Hui H. Yuan, Kai Zhang, Haitao Li, Hao Zhu, John E. Bonevich, Helmut Baumgart, Curt A. Richter, Qiliang Li
Metal-Oxide-Semiconductor capacitors with Bi2Te3 thin film sandwiched and embedded inside the oxide layer have been fabricated and studied. The capacitors exhibit ferroelectric-like hysteresis which is a result of the robust, reversible polarization of

PBTI-Induced Random Timing Jitter in Circuit-Speed Random Logic

November 13, 2014
Author(s)
Jiwu Lu, Canute I. Vaz, Guangfan Jiao, Jason P. Campbell, Jason T. Ryan, Kin P. Cheung, Gennadi Bersuker, Chadwin D. Young
Accurate reliability predictions of real world digital logic circuits rely heavily on the relevancy of device level testing. In the case of bias temperature instability (BTI), where recovery plays a significant role, a leap of faith is taken to translate

Influence of the central mode and soft phonon on the microwave dielectric loss near the strain-induced ferroelectric phase transitions in Sr n+1 uTi n uO 3n+1 u*

November 12, 2014
Author(s)
V. Goian, S. Kamba, D Nuzhnyy, Nathan Orloff, T. Birol, C.-H Lee, D. G. Schlom, James Booth
Recently, Lee et al. [1] used1% tensile strain to induce a ferroelectic instability in thin films of Srdn+1uTi nuO 3n+1u (n=1-6) phases. They showed that the Curie temperature T cu gradually increased with n, reaching 180 K for Sr7Ti6O19 (n=6). The

Broad-Band Microwave-Based Metrology Platform Development: Demonstration of In-Situ Failure Mode Diagnostic Capabilities for Integrated Circuit Reliability Analyses

November 7, 2014
Author(s)
Lin You, Chukwudi A. Okoro, Jungjoon Ahn, Joseph Kopanski, Yaw S. Obeng, Rhonda R. Franklin
In this paper, we discuss the use of broadband high frequency electromagnetic waves (RF) to non- destructively identify, classify and characterize performance-limiting defects in emerging nanoelectronic devices. As an illustration, the impact of thermal

Impact of BTI on Random Logic Circuit Critical Timing

October 31, 2014
Author(s)
Kin P. Cheung, Jiwu Lu, Guangfan Jiao, Jason P. Campbell, Jason T. Ryan
Bias temperature instability (BTI) is known to be a serious reliability issue for state-of-the-art Silicon MOSFET technology [1-6]. It is well-known that in addition to a “permanent” degradation, there is a large recoverable degradation component [7] that

Structural and Dynamical Studies of Acid Mediated Conversion in Amorphous-Calcium-Phosphate Based Dental Composites

October 31, 2014
Author(s)
Fan Zhang, Andrew Allen, Lyle E. Levine, Mark D. Vaudin, Drago Skrtic, Joseph M. Antonucci, Kathleen Hoffman, Anthony A. Giuseppetti, Jan Ilavsky
Amorphous calcium phosphate (ACP) based composites are promising restorative dental materials attributable to ACP's capacity to release calcium and phosphate ions through a complex reaction in which ACP is converted to its crystalline, apatitic form

Ultrafast THz photoconductivity of photovoltaic polymer-fullerene blends: a comparative study correlated with photovoltaic device performance

October 10, 2014
Author(s)
Edwin J. Heilweil, Jin Zuanming, Dominik Gehrig, Clare Dyer-Smith, Frederic Laquai, Mischa Bonn, Dmitry Turchinovich
Ultrafast photo-induced carrier dynamics in prototypical low band-gap polymer:fullerene photovoltaic blend films PTB7:PC70BM and P3HT:PC70BM is investigated using ultrafast terahertz (THz) spectroscopy. The sub-picosecond (ps) and few-ps decays of THz
Was this page helpful?