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Electronics

Semiconductors

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Displaying 551 - 575 of 748

Thermal Stability of Confined Flip-Chip Laminated w-Functionalized Monolayers

December 3, 2009
Author(s)
Mariona Coll Bau, Curt A. Richter, Christina A. Hacker
We present the results of an IR study of the effect of temperature on the formation of Au-monolayer-Si molecular junctions by using a flip-chip lamination approach. Carboxylic acid-terminated alkanethiols self-assembled on ultrasmooth gold substrate have

NIST Reference Material Scaffolds for Tissue Engineering

December 1, 2009
Author(s)
Carl G. Simon Jr.
The National Institute of Standards and Technology (NIST) has deployed Reference Material (RM) scaffolds for tissue engineering: a series of well-characterized 3D tissue scaffolds with differing porosities (RM 8395, RM 8396 and RM 8397) (Fig. 1). Customers

Electrical Conductivity and Relaxation in Poly(3-hexylthiophene)

November 25, 2009
Author(s)
Jan Obrzut, Kirt A. Page
ABSTRACT: We studied the complex conductivity of regio-regular poly(3-hexylthiophene) (P3HT) in the temperature range between 193K to 333 K (-80 C to 60 C) and in the frequency range from the direct current (DC) to 12 GHz. The identified relaxation process

Electrical Characterization of Soluble Anthradithiophene Derivatives

November 19, 2009
Author(s)
Brad Conrad, Calvin Chan, Marsha A. Loth, John E. Anthony, David J. Gundlach
Organic semiconductors remain an active subject for device physics and material science because of their varied electrical properties and potential for low-cost, high-throughput roll-to-roll processing. Several high-mobility oligomers, such as pentacene

Enhanced Mass Transport in Ultra-Rapidly-Heated Ni/Si Thin-Film Multilayers

November 15, 2009
Author(s)
Lawrence P. Cook, Richard E. Cavicchi, Nabil Bassim, Susie Eustis, Winnie Wong-Ng, Igor Levin, Ursula R. Kattner, Carelyn E. Campbell, Christopher B. Montgomery, William F. Egelhoff Jr., Mark D. Vaudin
We have investigated multilayer and bilayer Ni/Si thin films by nano-differential scanning calorimetry (DSC) at ultra rapid scan rates, in a temperature-time regime not accessible with conventional apparatus. DSC experiments were completed at slower scan

Measurement of heat capacity and enthalpy of formation of Nickel Silicide using Nano-calorimetry

November 2, 2009
Author(s)
Ravi Kummamuru, Lito De La Rama, Liang Hu, Mark D. Vaudin, Mikhail Efremov, Martin L. Green, David A. LaVan, Leslie Allen
We present characterization of energetics of the reaction between nickel and silicon thin films using differential scanning nano-calorimetry (nano-DSC). For the first time, nano-DSC measurements up to 850 °C and of enthalpy of thin film reactions have been

NIST High Resolution X-Ray Diffraction Standard Reference Material: SRM 2000

October 30, 2009
Author(s)
Donald A. Windover, David L. Gil, Albert Henins, James P. Cline
NIST recently released a standard reference material (SRM) for the calibration of high resolution X-ray diffraction (HRXRD) instruments. HRXRD is extensively used in the characterization of lattice distortion in thin single, epitaxial crystal layers on

Phosphorus Doping of Silicon at Substrate Temperatures Above 600 degC

October 22, 2009
Author(s)
P.E. Thompson, G.G. Jernigan, David S. Simons, P. Chi, B.T. Jonker, O.M.J. van 't Erve
P doping of Si during growth by molecular beam epitaxy (MBE) has been investigated in the temperature regime 700 oC to 870 oC. By designing a growth sequence that fully accounts for the P deposited in a delta-doped layer, and then tracks the P as it

A Fast, Simple Wafer-level Hall-Mobility Measurement Technique

October 21, 2009
Author(s)
Liangchun (. Yu, Kin P. Cheung, Vinayak Tilak, Greg Dunne, Kevin Matocha, Jason P. Campbell, Kuang Sheng
Mobility is a good indicator of device reliability. High channel mobility is one of the biggest challenges especially in novel devices such as high-k based MOSFET, III-V devices and SiC power MOSFET etc. Accurate measurement of channel mobility is required

Effects of sample preparation on bacterial colonization of polymers

October 19, 2009
Author(s)
Diana N. Zeiger, Christopher Stafford, Yajun Cheng, Stefan D. Leigh, Sheng Lin-Gibson, Nancy Lin
Characterization of materials developed for medical usage frequently includes studies in which the materials are inoculated with bacteria in order to assess biofilm formation. Differences in the bacteria are considered to be due to the material alone; the

Optical Properties of Semiconductors

October 19, 2009
Author(s)
David G. Seiler, Stefan Zollner, Alain C. Diebold, Paul Amirtharaj
Rapid advances in semiconductor manufacturing and associated technologies have increased the need for optical characterization techniques for materials analysis and in-situ monitoring/control applications. Optical measurements have many unique and

Wafer-level Hall Measurement on SiC MOSFET

October 16, 2009
Author(s)
Liangchun (. Yu, Kin P. Cheung, Vinayak Tilak, Greg Dunne, Kevin Matocha, Jason P. Campbell, John S. Suehle, Kuang Sheng
Low channel mobility is one of the biggest challenges to commercializing SiC MOSFETs. Accurate mobility measurement is essential for understanding the mechanisms that lead to low mobility. The most widely used effective mobility measurements overestimate

Relative Photon-to-Carrier Efficiencies of Alternating Nanolayers of Zinc Phthalocyanine and C60 Multilayer Films Assessed by Time-Resolved Terahertz Spectroscopy

October 1, 2009
Author(s)
Okan Esenturk, Joseph S. Melinger, Paul A. Lane, Edwin J. Heilweil
Alternating multi-layer and 1:1 blended films of zinc phthalocyanine (ZnPc)and buckminsterfullerene (C60) were investigated as model active layers for solar cells by Time-Resolved Terahertz Spectroscopy (TRTS). Relative photon-to-carrier efficiencies 2

Photomask metrology using a 193 nm scatterfield microscope

September 30, 2009
Author(s)
Richard Quintanilha, Bryan M. Barnes, Martin Y. Sohn, Lowell P. Howard, Richard M. Silver, James E. Potzick, Michael T. Stocker
The current photomask linewidth Standard Reference Material (SRM) supplied by the National Institute of Standards and Technology (NIST), SRM 2059, is the fifth generation of such standards for mask metrology. The calibration of this mask has been usually

Unified Model for Bulk Acoustic Wave Resonators Nonlinear Effects

September 20, 2009
Author(s)
Eduard Rocas, Juan C. Collado Gomez, James C. Booth, Enrique Iborra, Robert Aigner
We present a nonlinear model for Bulk Acoustic Wave resonators that combines different sources of nonlinearity, using device-independent material specific parameters, to predict the intermodulation and harmonics generation. The actual model accounts for
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