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We present a simple and straightforward approximate approach to removing resonant artifacts that arise in the material parameters extracted near half-wavelength resonances that arise from transmission/reflection (T/R) measurements on low-loss materials. In
A scatterfield microscope for deep sub-wavelength semiconductor metrology using 193 nm light has been designed. In addition to accommodating the fixed numerical aperture and size of its commercial catadioptric objective lens, the illumination optics are
Hui H. Yuan, Guangjun Cheng, Lin You, Haitao Li, Hao Zhu, Wei Li, Joseph J. Kopanski, Yaw S. Obeng, Angela R. Hight Walker, David J. Gundlach, Curt A. Richter, D. E. Ioannou, Qiliang Li
In this work, we present a study of enhancing MoS2 transistor performance by using proper metal contact. We found that the on-state current of MoS2 field-effect transistors with 30 nm Au/ 30 nm Ag contacts is enhanced more than 60 times and the
Guangfan Jiao, Jiwu Lu, Jason Campbell, Jason Ryan, Kin P. Cheung, Chadwin D. Young, Gennadi Bersuker
This work utilizes device-level eye-diagram measurements to examine NBTI-induced changes in timing jitter at circuit speeds. The measured jitter is examined for a variety of ring-oscillator and pseudo-random gate patterns. The ring-oscillator patterns were
Hui H. Yuan, Kai Zhang, Haitao Li, Hao Zhu, John E. Bonevich, Helmut Baumgart, Curt A. Richter, Qiliang Li
Metal-Oxide-Semiconductor capacitors with Bi2Te3 thin film sandwiched and embedded inside the oxide layer have been fabricated and studied. The capacitors exhibit ferroelectric-like hysteresis which is a result of the robust, reversible polarization of
Jiwu Lu, Canute I. Vaz, Guangfan Jiao, Jason P. Campbell, Jason T. Ryan, Kin P. Cheung, Gennadi Bersuker, Chadwin D. Young
Accurate reliability predictions of real world digital logic circuits rely heavily on the relevancy of device level testing. In the case of bias temperature instability (BTI), where recovery plays a significant role, a leap of faith is taken to translate
V. Goian, S. Kamba, D Nuzhnyy, Nathan Orloff, T. Birol, C.-H Lee, D. G. Schlom, James Booth
Recently, Lee et al. [1] used1% tensile strain to induce a ferroelectic instability in thin films of Srdn+1uTi nuO 3n+1u (n=1-6) phases. They showed that the Curie temperature T cu gradually increased with n, reaching 180 K for Sr7Ti6O19 (n=6). The
Lin You, Chukwudi A. Okoro, Jungjoon Ahn, Joseph Kopanski, Yaw S. Obeng, Rhonda R. Franklin
In this paper, we discuss the use of broadband high frequency electromagnetic waves (RF) to non- destructively identify, classify and characterize performance-limiting defects in emerging nanoelectronic devices. As an illustration, the impact of thermal
Kin P. Cheung, Jiwu Lu, Guangfan Jiao, Jason P. Campbell, Jason T. Ryan
Bias temperature instability (BTI) is known to be a serious reliability issue for state-of-the-art Silicon MOSFET technology [1-6]. It is well-known that in addition to a permanent degradation, there is a large recoverable degradation component [7] that
Donald Windover, David Gil, Yasushi Azuma, Toshiyuki Fujimoto
We test the reproducibility of X-ray reflectometry(XRR) measurements and optimizations using an National Metrology Institute of Japan (NMIJ)/National Institute of Advanced Industrial Science and Technology (AIST) pre-standard. Based on bootstrap analysis
Fan Zhang, Andrew Allen, Lyle E. Levine, Mark D. Vaudin, Drago Skrtic, Joseph M. Antonucci, Kathleen Hoffman, Anthony A. Giuseppetti, Jan Ilavsky
Amorphous calcium phosphate (ACP) based composites are promising restorative dental materials attributable to ACP's capacity to release calcium and phosphate ions through a complex reaction in which ACP is converted to its crystalline, apatitic form
Edwin J. Heilweil, Jin Zuanming, Dominik Gehrig, Clare Dyer-Smith, Frederic Laquai, Mischa Bonn, Dmitry Turchinovich
Ultrafast photo-induced carrier dynamics in prototypical low band-gap polymer:fullerene photovoltaic blend films PTB7:PC70BM and P3HT:PC70BM is investigated using ultrafast terahertz (THz) spectroscopy. The sub-picosecond (ps) and few-ps decays of THz