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Electronics

Semiconductors

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Displaying 526 - 550 of 1445

Interface-State Capture Kinetics by Variable Duty Cycle Charge Pumping

April 27, 2015
Author(s)
Asahiko Matsuda, Jason T. Ryan, Jason P. Campbell, Kin P. Cheung
We demonstrated a new variant of the charge-pumping technique featuring varying duty cycle gate pulses to directly probe the interface-state carrier capture process in the time domain. This technique retains the exceptional sensitivity of charge pumping

Interface-State Capture Cross Section — Why Does It Vary So Much?

April 20, 2015
Author(s)
Jason T. Ryan, Asahiko Matsuda, Jason P. Campbell, Kin P. Cheung
A capture cross section value is often assigned to Si-SiO2 interface defects. Using a kinetic variation of the charge pumping technique and transition state theory, we show that the value of capture cross section is extremely sensitive to the measurement

The Nature of Record Efficiency Fluid-Processed Nanotube-Silicon Heterojunctions

April 20, 2015
Author(s)
Jeffrey A. Fagan, Erik K. Hobbie, John M. Harris, Matthew R. Semler
The dark transport characteristics of heterojunctions assembled from type, chirality and length-purified single-wall carbon nanotubes (SWCNTs) are used to clarify the nature of nanotube-silicon diodes and solar cells. The freestanding films show remarkable

Biexciton formation and exciton coherent coupling in layered GaSe

April 14, 2015
Author(s)
Prasenjit Dey, Jagannath Paul, Galan Moody, Christopher Stevens, Neil Glikin, Zakhar Kovalyuk, Zakhar Kudrynskyi, Aldo Romero, Andres Cantarero, David Hilton
Nonlinear two-dimensional Fourier transform (2DFT) and linear absorption spectra of layered GaSe exhibit two peaks at the direct 1s exciton energy. The doublet is assigned to a splitting of the excitonic ground state into the singlet and triplet. The 2DFT

Electromagnetic Field Test Structure Chip for Back End of the Line Metrology

March 23, 2015
Author(s)
Lin You, Jungjoon Ahn, Emily Hitz, Jonathon Michelson, Yaw S. Obeng, Joseph J. Kopanski
A test chip to produce known and controllable gradients of surface potential and magnetic field at the chip surface and suitable for imaging with various types of scanning probe microscopes is presented. The purpose of the test chip is to evaluate various

Frequency Modulated Charge Pumping with Extremely High Gate Leakage

February 13, 2015
Author(s)
Jason T. Ryan, Jibin Zou, Jason P. Campbell, Richard Southwick, Kin P. Cheung, Anthony Oates, Rue Huang
Charge pumping (CP) has proven itself as one of the most utilitarian methods to quantify defects in metal-oxide-semiconductor devices. In the presence of low to moderate gate leakage, CP quantification is most often implemented via a series of measurements

Microwave Near-Field Imaging of Two-Dimensional Semiconductors

January 27, 2015
Author(s)
Samuel Berweger, Joel Weber, Jimmy J. Li, Jesus M. Velazquez, Adam Pieterick, Norman A. Sanford, Albert V. Davydov, Thomas Mitchell (Mitch) Wallis, Pavel Kabos
Optimizing new generations of 2D devices based on van der Waals materials will require techniques capable of measuring variations in electronic properties in situ and with nanometer spatial resolution. We perform scanning microwave microscopy (SMM) imaging

Particle-based simulation of nanoscale systems and materials

January 1, 2015
Author(s)
Alexander Y. Smolyanitsky, Vinod K. Tewary
This book chapter is focused on the introduction of molecular dynamics (MD) and molecular statics (MS), as well as some of their uses for studying the thermomechanical and (indirectly) electronic properties at the nanoscale. We first introduce the general
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