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The gate dielectrics year-in-review includes a comprehensive examination of the past year s reports which detail gate stack reliability issues and the corresponding physical mechanisms which limit the performance and lifetimes of advanced devices. The
The negative-bias temperature instability (NBTI) is a reliability problem that, in the last ten years, has risen from relative obscurity to become the most important reliability problem in advanced pMOSFET devices. Even though a significant effort has been
Jenni R. Popp, Colm Flannery, Tammy L. Oreskovic, Jennifer Recknor, Kristi S. Anseth, Timothy P. Quinn
Functional tissue engineering of articular cartilage is rapidly advancing as a technique to develop regenerative and reparative treatments for cartilage degeneration and osteoarthritis. Tissue engineered constructs are often developed using a combination
J. J. Brown, A. I. Baca, Kristine A. Bertness, D. A. Dikin, R. S. Ruoff, Victor M. Bright
This paper reports the first direct tensile tests on nearly defect free, n-type (Si-doped) gallium nitride single crystal nanowires. Here, for the first time, nanowires have been integrated with actuated, active microelectromechanical (MEMS) structures
Critical flow venturis (CFVs) can be used to measure flow under transient pressure and flow conditions with uncertainties of 0.13 % or less (95 % confidence level). Blow-down tests transferred 630 g of nitrogen during a 100 s interval from an unregulated
Sarah E. Henrickson, Edmund A. DiMarzio, Qian Wang, Vincent M. Stanford, John J. Kasianowicz
It has been shown that individual molecules of single stranded DNA can be driven electrophoretically through a single Staphylococcus aureus ?-hemolysin ion channel. Polynucleotides thread through the channel as extended chains and the polymer-induced ionic
Richard Quintanilha, Martin Y. Sohn, Bryan M. Barnes, Richard M. Silver
Resist-on-silicon sub-50 nm targets have been investigated using a 193 nm angle-resolved scatter field microscope(ARSM). The illumination path of this microscope allows customization of the Conjugate Back Focal Plane (CBFP) while separate collection paths
Calvin Chan, Lee J. Richter, Brad A. Dinardo, Cherno Jaye, Brad Conrad, Hyun Wook Ro, David Germack, Daniel A. Fischer, Dean M. DeLongchamp, David J. Gundlach
Mariona Coll Bau, Oana Jurchescu, Nadine Gergel-Hackett, Curt A. Richter, Christina Hacker
Flip Chip Lamination approach to fabricate top metal contacts on organic-based devices ; M.Coll, O.D. Jurchescu, N. Gergel-Hackett, C.A. Richter, C,A, Hacker, American Physical Society (APS), March 2010, Portland, OR, USA (oral)
Norman A. Sanford, Paul T. Blanchard, Kristine A. Bertness, Lorelle Mansfield, John B. Schlager, Aric W. Sanders, Alexana Roshko, Beau Burton, Steven George
Analysis of steady-state and transient photoconductivity measurements at room temperature performed on c-axis oriented GaN nanowires yielded estimates of free carrier concentration, drift, mobility, surface band bending, and surface capture coefficient for
Nhan V. Nguyen, Min Xu, Oleg A. Kirillov, Pei D. Ye, C Wang, Kin P. Cheung, John S. Suehle
Band offsets at the interfaces of InxGa1-xAs / Al2O3 / Al where x = 0.53 and x = 0.75 were determined by internal photoemission and spectroscopic ellipsometry. The photoemission energy threshold at the InxGa1-xAs / Al2O3 interface was found to be
Michael C. Weiger, Jung Jin Park, Marc D. Roy, Christopher M. Stafford, Alamgir Karim, Matthew L. Becker
The genesis of bone and teeth results from highly coordinated processes which involve several cell types, proteins which direct the nucleation and crystallization of inorganic hydroxyapatite (HA). Recent studies have shown that engineered peptide sequences
Transistors have been made from single molecules, where the flow of electrons is controlled by modulating the energy of the molecular orbitals. Insight from such systems could aid the development of future electronic devices.
Mariona Coll Bau, Curt A. Richter, Christina Hacker
Nanoelectronic fabrication with Flip chip lamination Mariona Coll, CA Richter, CA Hacker, Colloquium Catalan Institute of Nanoscience and Nanotechnology CIN2, Barcelona Spain, Dec 2009.
STEP AP210 (ISO-10303:210) is the first international standard capable of representing both ECAD and MCAD data of packaged components within a unified model. In order to promote AP210 as a standards-based mechanism for the representation of component data