Band Offsets of Al2O3 / In1-xGaxAs (x = 0.53 and 0.75) and the Effects of Post-Deposition Annealing
Nhan V. Nguyen, Min Xu, Oleg A. Kirillov, Pei D. Ye, C Wang, Kin P. Cheung, John S. Suehle
Band offsets at the interfaces of InxGa1-xAs / Al2O3 / Al where x = 0.53 and x = 0.75 were determined by internal photoemission and spectroscopic ellipsometry. The photoemission energy threshold at the InxGa1-xAs / Al2O3 interface was found to be insensitive to the Indium composition, but shifted to a lower energy after a post-deposition annealed at high temperatures. Sub-threshold electron photoemission was also observed for the annealed sample attributing to interfacial layer formation during the annealing process.
, Xu, M.
, Kirillov, O.
, Ye, P.
, Wang, C.
, Cheung, K.
and Suehle, J.
Band Offsets of Al<sub>2</sub>O<sub>3</sub> / In<sub>1-x</sub>Ga<sub>x</sub>As (x = 0.53 and 0.75) and the Effects of Post-Deposition Annealing, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=903535
(Accessed November 28, 2023)