Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Band Offsets of Al2O3 / In1-xGaxAs (x = 0.53 and 0.75) and the Effects of Post-Deposition Annealing

Published

Author(s)

Nhan V. Nguyen, Min Xu, Oleg A. Kirillov, Pei D. Ye, C Wang, Kin P. Cheung, John S. Suehle

Abstract

Band offsets at the interfaces of InxGa1-xAs / Al2O3 / Al where x = 0.53 and x = 0.75 were determined by internal photoemission and spectroscopic ellipsometry. The photoemission energy threshold at the InxGa1-xAs / Al2O3 interface was found to be insensitive to the Indium composition, but shifted to a lower energy after a post-deposition annealed at high temperatures. Sub-threshold electron photoemission was also observed for the annealed sample attributing to interfacial layer formation during the annealing process.
Citation
Applied Physics Letters
Volume
96

Keywords

Al2O3, InGaAs, ALD, internal photoemission, ellipsometry, MOS, band offset, band alignment

Citation

Nguyen, N. , Xu, M. , Kirillov, O. , Ye, P. , Wang, C. , Cheung, K. and Suehle, J. (2010), Band Offsets of Al<sub>2</sub>O<sub>3</sub> / In<sub>1-x</sub>Ga<sub>x</sub>As (x = 0.53 and 0.75) and the Effects of Post-Deposition Annealing, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=903535 (Accessed May 23, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created February 2, 2010, Updated February 19, 2017