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PUBLICATIONS

Sub-50 nm measurements using a 193 nm angle-resolved scatterfield microscope

Published

Author(s)

Richard Quintanilha, Martin Y. Sohn, Bryan M. Barnes, Richard M. Silver

Abstract

Resist-on-silicon sub-50 nm targets have been investigated using a 193 nm angle-resolved scatter field microscope(ARSM). The illumination path of this microscope allows customization of the Conjugate Back Focal Plane (CBFP) while separate collection paths permit both high-magnification cation and Fourier-plane imaging. Aspects of the calibration of this microscope are presented. Full- field, Fourier-plane images are collected as individual targets are illuminated using a field-of-view smaller than the target size; the range of incident polar angles corresponds to the Numerical Aperture (NA) of the objective, NA = 0.08 to 0.74. Next, angle-resolved scatter field high-magnification cation imaging of these same targets are acquired in a conical mounting con figuration by scanning the 12 mm diameter CBFP with a 1 mm diameter aperture. The results of these measurements and the prospects for quantitative, simultaneous measurement of multiple targets are discussed.
Proceedings Title
Proceeding of SPIE Metrology, Inspection,and Process Control for Microlithography XXIV
Volume
76381
Conference Dates
February 22-March 25, 2010
Conference Location
San Jose, CA
Pub Type
Conferences

Keywords

DUV scatterfi eld microscopy, Fourier-plane imaging, simultaneous multi-targets measurements
Semiconductors and Dimensional metrology

Citation

Quintanilha, R. , Sohn, M. , Barnes, B. and Silver, R. (2010), Sub-50 nm measurements using a 193 nm angle-resolved scatterfield microscope, Proceeding of SPIE Metrology, Inspection,and Process Control for Microlithography XXIV, San Jose, CA (Accessed December 16, 2024)

Issues

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Created April 1, 2010, Updated February 19, 2017