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Tensile measurement of single crystal gallium nitride nanowires on MEMS test stages

Published

Author(s)

J. J. Brown, A. I. Baca, Kristine A. Bertness, D. A. Dikin, R. S. Ruoff, Victor M. Bright

Abstract

This paper reports the first direct tensile tests on nearly defect free, n-type (Si-doped) gallium nitride single crystal nanowires. Here, for the first time, nanowires have been integrated with actuated, active microelectromechanical (MEMS) structures using dielectrophoresis-driven self-assembly and Pt-C clamps created using a gallium focused ion beam. The nanowire modulus of elasticity is measured to be about 200 GPa, and some nanowire specimens demonstrated more than 4% elongation or greater than 6 GPa maximum engineering stress before failure. Failure modes included clamp failure, nanowire c-plane fractures, and insufficient force from the MEMS test actuator.
Citation
Sensors and Actuators A-Physical

Keywords

Tensile loading, gallium nitride, nanowire, single crystal, mechanical testing, MEMS

Citation

Brown, J. , Baca, A. , Bertness, K. , Dikin, D. , Ruoff, R. and Bright, V. (2010), Tensile measurement of single crystal gallium nitride nanowires on MEMS test stages, Sensors and Actuators A-Physical (Accessed May 22, 2024)

Issues

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Created April 17, 2010, Updated October 12, 2021