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Gate Oxide Long-Term Reliability of 4H-SiC MOS Devices

Published

Author(s)

Liangchun (. Yu, Kin P. Cheung, Greg Dunne, Kevin Matocha, John S. Suehle, Kuang Sheng

Citation

Yu, L. , Cheung, K. , Dunne, G. , Matocha, K. , Suehle, J. and Sheng, K. (2009), Gate Oxide Long-Term Reliability of 4H-SiC MOS Devices (Accessed December 8, 2024)

Issues

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Created October 14, 2009, Updated February 19, 2017