Yu, L.
, Cheung, K.
, Dunne, G.
, Matocha, K.
, Suehle, J.
and Sheng, K.
(2009),
Gate Oxide Long-Term Reliability of 4H-SiC MOS Devices
(Accessed April 18, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Gate Oxide Long-Term Reliability of 4H-SiC MOS Devices
Published
Author(s)
, , Greg Dunne, Kevin Matocha, , Kuang Sheng
Pub Type
Talks
Citation
Created October 14, 2009, Updated February 19, 2017