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Gate Oxide Long-Term Reliability of 4H-SiC MOS Devices

Published

Author(s)

Liangchun (. Yu, Kin P. Cheung, Greg Dunne, Kevin Matocha, John S. Suehle, Kuang Sheng
Proceedings Title
Silicon Carbide and Related Materials 2009
Conference Dates
October 11-16, 2009
Conference Location
Nuremberg
Conference Title
International Conference on Silicon Carbide and Related Materials

Citation

Yu, L. , Cheung, K. , Dunne, G. , Matocha, K. , Suehle, J. and Sheng, K. (2009), Gate Oxide Long-Term Reliability of 4H-SiC MOS Devices, Silicon Carbide and Related Materials 2009, Nuremberg, -1 (Accessed April 20, 2024)
Created October 11, 2009, Updated October 4, 2017