Yu, L.
, Cheung, K.
, Dunne, G.
, Matocha, K.
, Suehle, J.
and Sheng, K.
(2009),
Gate Oxide Long-Term Reliability of 4H-SiC MOS Devices, Silicon Carbide and Related Materials 2009, Nuremberg, -1
(Accessed December 4, 2024)
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Gate Oxide Long-Term Reliability of 4H-SiC MOS Devices
Published
Author(s)
, , Greg Dunne, Kevin Matocha, , Kuang Sheng
Proceedings Title
Silicon Carbide and Related Materials 2009
Conference Dates
October 11-16, 2009
Conference Location
Nuremberg
Conference Title
International Conference on Silicon Carbide and Related Materials
Pub Type
Conferences
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created October 11, 2009, Updated October 4, 2017