@conference{231931,
  author = {Liangchun Yu and Kin Cheung and Greg Dunne and Kevin Matocha and John Suehle and Kuang Sheng},
  title = {Gate Oxide Long-Term Reliability of 4H-SiC MOS Devices},
  year = {2009},
  month = {2009-10-11},
  publisher = {Silicon Carbide and Related Materials 2009, Nuremberg, -1},
  language = {en},
}