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Wafer-level Hall Measurement on SiC MOSFET

Published

Author(s)

Liangchun (. Yu, Kin P. Cheung, Vinayak Tilak, Greg Dunne, Kevin Matocha, Jason P. Campbell, John S. Suehle, Kuang Sheng

Abstract

Low channel mobility is one of the biggest challenges to commercializing SiC MOSFETs. Accurate mobility measurement is essential for understanding the mechanisms that lead to low mobility. The most widely used effective mobility measurements overestimate the inversion charge for devices that have high level of defects. Mobility measured by the Hall effect is more accurate; however the conventional Hall mobility measurement is tedious. In this work, we demonstrate a wafer-level Hall measurement technique, which is simple and convenient to implement. With this method, extensive study of the mobility degradation is possible.

Keywords

MOSFET, channel mobility, Hall mobility

Citation

Yu, L. , Cheung, K. , Tilak, V. , Dunne, G. , Matocha, K. , Campbell, J. , Suehle, J. and Sheng, K. (2009), Wafer-level Hall Measurement on SiC MOSFET, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=907098 (Accessed June 22, 2024)

Issues

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Created October 16, 2009, Updated February 19, 2017