Phosphorus Doping of Silicon at Substrate Temperatures Above 600 °C
P.E. Thompson, G.G. Jernigan, David S. Simons, P. Chi, B.T. Jonker, O.M.J. van 't Erve
P doping of Si during growth by molecular beam epitaxy (MBE) has been investigated in the temperature regime 700 oC to 870 oC. By designing a growth sequence that fully accounts for the P deposited in a delta-doped layer, and then tracks the P as it segregates into the undoped Si and traps the surface P in a low temperature Si cap, it was determined that the onset of significant P evaporation during growth occurred at a substrate temperature of 663 10 oC. The P sublimation process had an activation energy of 199 22 kJ/mole.
, Jernigan, G.
, Simons, D.
, Chi, P.
, Jonker, B.
and van 't Erve, O.
Phosphorus Doping of Silicon at Substrate Temperatures Above 600 °C, Thin Solid Films, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=902765
(Accessed December 3, 2023)