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Phosphorus Doping of Silicon at Substrate Temperatures Above 600 °C



P.E. Thompson, G.G. Jernigan, David S. Simons, P. Chi, B.T. Jonker, O.M.J. van 't Erve


P doping of Si during growth by molecular beam epitaxy (MBE) has been investigated in the temperature regime 700 oC to 870 oC. By designing a growth sequence that fully accounts for the P deposited in a delta-doped layer, and then tracks the P as it segregates into the undoped Si and traps the surface P in a low temperature Si cap, it was determined that the onset of significant P evaporation during growth occurred at a substrate temperature of 663  10 oC. The P sublimation process had an activation energy of 199  22 kJ/mole.
Thin Solid Films


molecular beam epitaxy, phosphorus, segregation, silicon, SIMS


Thompson, P. , Jernigan, G. , Simons, D. , Chi, P. , Jonker, B. and van 't Erve, O. (2009), Phosphorus Doping of Silicon at Substrate Temperatures Above 600 °C, Thin Solid Films, [online], (Accessed December 3, 2023)
Created October 22, 2009, Updated May 19, 2022