Thompson, P.
, Jernigan, G.
, Simons, D.
, Chi, P.
, Jonker, B.
and van 't Erve, O.
(2009),
Phosphorus Doping of Silicon at Substrate Temperatures Above 600 °C, Thin Solid Films, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=902765
(Accessed April 29, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Phosphorus Doping of Silicon at Substrate Temperatures Above 600 °C
Published
Author(s)
P.E. Thompson, G.G. Jernigan, , P. Chi, B.T. Jonker, O.M.J. van 't Erve
Abstract
P doping of Si during growth by molecular beam epitaxy (MBE) has been investigated in the temperature regime 700 oC to 870 oC. By designing a growth sequence that fully accounts for the P deposited in a delta-doped layer, and then tracks the P as it segregates into the undoped Si and traps the surface P in a low temperature Si cap, it was determined that the onset of significant P evaporation during growth occurred at a substrate temperature of 663 10 oC. The P sublimation process had an activation energy of 199 22 kJ/mole.Citation
Thin Solid Films
Pub Type
Journals
Download Paper
Keywords
molecular beam epitaxy, phosphorus, segregation, silicon, SIMS
Citation
Created October 22, 2009, Updated May 19, 2022