Conrad, B.
, Chan, C.
, Loth, M.
, Anthony, J.
and Gundlach, D.
(2009),
Electrical Characterization of Soluble Anthradithiophene Derivatives
(Accessed March 13, 2025)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Electrical Characterization of Soluble Anthradithiophene Derivatives
Published
Author(s)
, , Marsha A. Loth, John E. Anthony,
Abstract
Organic semiconductors remain an active subject for device physics and material science because of their varied electrical properties and potential for low-cost, high-throughput roll-to-roll processing. Several high-mobility oligomers, such as pentacene and rubrene, have been identified yet most are incompatible with current manufacturing methods because of issues such as insolubility or poor thin film structure. One benefit of working with organic semiconductors is the ability to modify chemical composition to tune both the electrical and physical properties, specifically crystallinity and solubility. Such recently developed organic semiconducting materials are among the forefront of recent advances in the field of organic electronics. Electrical characterization of several newly developed partially fluorinated anthradithiophene (F-ADT) derivatives will be presented. Insights gained from single crystal and spin cast transistor devices on a variety of surfaces will be presented.Pub Type
Talks
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created November 19, 2009, Updated February 19, 2017