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Electronics

Semiconductors

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Displaying 576 - 600 of 1445

Ultrafast THz photoconductivity of photovoltaic polymer-fullerene blends: a comparative study correlated with photovoltaic device performance

October 10, 2014
Author(s)
Edwin J. Heilweil, Jin Zuanming, Dominik Gehrig, Clare Dyer-Smith, Frederic Laquai, Mischa Bonn, Dmitry Turchinovich
Ultrafast photo-induced carrier dynamics in prototypical low band-gap polymer:fullerene photovoltaic blend films PTB7:PC70BM and P3HT:PC70BM is investigated using ultrafast terahertz (THz) spectroscopy. The sub-picosecond (ps) and few-ps decays of THz

Physics-based Electro-thermal Saber Model and Parameter Extraction for High-Voltage SiC Buffer IGBTs

September 15, 2014
Author(s)
Tam H. Duong, Allen R. Hefner Jr., Jose M. Ortiz, Sei-Hyung Ryu , Edward VanBrunt, Lin Cheng, Scott Allen, John W. Palmour
The purpose of this paper is to present a physics-based electro-thermal Saber model and parameter extraction sequence for high-voltage SiC buffer layer n-channel insulated gate bipolar transistors (IGBTs). This model was developed by modifying and

Selective Area Growth of Ga- and N-polar GaN Nanowire Arrays on Non-Polar Si (111) Substrates

September 7, 2014
Author(s)
Matthew D. Brubaker, Shannon M. Duff, Todd E. Harvey, Paul T. Blanchard, Alexana Roshko, Aric W. Sanders, Norman A. Sanford
This study presents a technique for obtaining Ga- and N-polar Gallium Nitride nanowire (GaN NW) arrays on non-polar Si (111) substrates by use of polarity-controlled AlN/GaN buffer layers. AlN films are demonstrated to adopt Al-/N-polarity for N-/Al-rich

Enriching 28Si beyond 99.9998 % for semiconductor quantum computing

August 5, 2014
Author(s)
Kevin J. Dwyer, Joshua M. Pomeroy, David S. Simons, June W. Lau, Kristen L. Steffens
Using a laboratory-scale apparatus, we enrich 28Si and produce material with 40 times less residual 29Si than previously reported. Starting from natural abundance silane gas, we offer an alternative to industrial gas centrifuges for providing materials

Crosstalk Corrections for Coplanar-Waveguide Scattering-Parameter Calibrations

August 1, 2014
Author(s)
Dylan F. Williams, Franz-Josef Schmuckle, Ralf Doerner, Phung N. Gia, Uwe Arz, Wolfgang Heinrich
We study crosstalk and crosstalk corrections in coplanar waveguide vector-network-analyzer calibrations. We show that while crosstalk corrections can improve measurement accuracy, the effectiveness of the corrections depends on a number of factors

Development of an EUVL collector with infrared radiation suppression

August 1, 2014
Author(s)
Steven E. Grantham, Mike Kriese, Yuriy Platonov, Bodo Ehlers, Licai Jiang, Jim Rodriguez, Mueller Ulrich, Shayna khatri, Adam Magruder, Charles S. Tarrio
Laser-produced plasma (LPP) sources for extreme ultraviolet lithography (EUVL) systems utilize CO2 lasers operating with wavelength 10.6μm. Since multilayer-coated optics have high reflectivity for this infrared radiation (IR), a significant and

Improved measurement capabilities at the NIST EUV Reflectometry Facility

August 1, 2014
Author(s)
Charles S. Tarrio, Steven E. Grantham, Thomas A. Germer, Jack C. Rife, Thomas B. Lucatorto, Mike Kriese, Yuriy Platonov, Licai Jiang, Jim Rodriguez
The NIST Extreme Ultraviolet (EUV) Reflectometry Facility was designed in the 1990s to accommodate the largest multilayer optics envisioned at that time. However, with increasing power requirements for an EUV scanner, source collection optics have grown

The effect of protein corona composition on the interaction of carbon nanotubes with human blood platelets

July 31, 2014
Author(s)
Silvia H. De Paoli Lacerda, Lukas Diduch, Tseday Tegegn, Martina Orecna, Michael Strader, Elena Karnaukhova, John Bonevich, Abdu Alayash, Karel Holada, Jan Simak
Carbon nanotubes (CNT) are one of the most promising nanomaterials for use in medicine. Applications of CNT in drug/gene delivery, diagnostics and tissue engineering, among other applications, require contact of CNT with blood. Therefore, evaluation of

Electronic Structure and Band Alignment at Epitaxial Co3O4/SrTiO3 Heterojunction

July 21, 2014
Author(s)
Liang Qiao, Wei Li, Haiyan xiao, Harry M. Meyer, Xuelei Liang, Nhan Van Nguyen, Michael D. Biegalski
The electronic properties of solid-solid interfaces play critical roles in a variety of technological applications. Recent advance of film epitaxy and characterization techniques have demonstrated a wealthy of exotic phenomena at interfaces of oxide

Photon Emission from a Cavity-Coupled Double Quantum Dot

July 16, 2014
Author(s)
Y.-Y. Liu, Karl Petersson, J. Stehlik, Jacob Taylor, Jason Petta
We study a voltage biased InAs double quantum dot (DQD) that is coupled to a superconducting transmission line resonator. Inelastic tunneling in the DQD is mediated by electron phonon coupling and coupling to the cavity mode. We show that electronic
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