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Electronics

Semiconductors

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Displaying 576 - 600 of 748

Formation of Silicon-Based Molecular Electronic Structures Using Flip-chip Lamination

August 11, 2009
Author(s)
Mariona Coll Bau, Lauren H. Miller, Lee J. Richter, Daniel R. Hines, Curt A. Richter, Christina A. Hacker
The use of organic molecules to impart electrical surface properties has been a subject of intense research not only from a fundamental perspective but for many technological applications. In particular, organic molecules have been proposed as active

Development of a Seebeck Coefficient Standard Reference Material

August 7, 2009
Author(s)
Nathan Lowhorn, Winnie Wong-Ng, John Lu, Evan L. Thomas, Makoto Otani, Martin L. Green, Neil Dilley, Jeffrey Sharp, Thanh N. Tran
We have successfully developed a Seebeck coefficient Standard Reference Material (SRM ), Bi2Te3, that is crucial for interlaboratory data comparison and for instrument calibration. Certification measurements were performed using two different techniques on

Effects of Polymorphism on Charge Transport in Organic Semiconductors

August 3, 2009
Author(s)
Oana Jurchescu, M. Devin, Sankar Subramanian, Sean R. Parkin, Brandon Vogel, John E. Anthony, Thomas Jackson, David J. Gundlach
The increasing interest in fluorinated 5,11-bis(triethylsilylethynyl)anthradithiophene (diF TES ADT) is motivated by the demonstrated high performance field-effect transistors and circuits based on this material, complemented by reduced complexity

Nanoscale Measurements with a Through-Focus Scanning-Optical-Microscope

July 15, 2009
Author(s)
Ravikiran Attota, Richard M. Silver, Thomas A. Germer
We present a novel optical technique that produces nanometer dimensional measurement sensitivity using a conventional optical microscope, by analyzing through-focus scanning-optical-microscope (TSOM) images obtained at different focus positions. In

Semiconductor Microelectronics and Nanoelectronics Programs

July 13, 2009
Author(s)
Joaquin (. Martinez, Yaw S. Obeng, Michele L. Buckley
The microelectronics industry supplies vital components to the electronics industry and to the U.S. economy, enabling repaid improvements in productivity and in new high technology growth industries such as electronic commerce and biotechnology. The

EBSD Analysis of Narrow Damascene Copper Lines

May 11, 2009
Author(s)
Roy H. Geiss, David T. Read, Glenn Alers, Rebekah L. Graham
Orientation imaging microscopy (OIM) by electron back scatter diffraction (EBSD) has been used to examine grain size and crystallographic orientations of damascene Cu lines nominally 25 nm to 55 nm in width and 100 nm thick. These are the smallest

Random Telegraph Noise in Highly Scaled nMOSFETs

April 26, 2009
Author(s)
Jason P. Campbell, Jin Qin, Kin P. Cheung, Liangchun (. Yu, John S. Suehle, A Oates, Kuang Sheng
Recently 1/f and random telegraph noise (RTN) studies have been used to infer information about bulk dielectric defects' spatial and energetic distributions. These analyses rely on a noise framework which involves charge exchange between the inversion

Indentation of Single-Crystal Silicon Nanolines: Buckling and Contact Friction at Nanoscale

April 8, 2009
Author(s)
Bin Li, Qiu Zhao, Huai Huang, Zhiquan Luo, Jay Im, Michael W. Cresswell, Richard A. Allen, Min K. Kang, Rui Huang, Paul S. Ho
Silicon nanostructures are essential building blocks for nanoelectronic devices and nano-electromechanical systems (NEMS). Mechanical characterization at nanoscale is important for practical applications but remains challenging as the mechanical properties

Ultrasmooth Gold as a Top Metal Electrode for Molecular Electronic Devices

April 7, 2009
Author(s)
Mariona Coll Bau, Christina A. Hacker, Lauren H. Miller, Daniel R. Hines, E. C. Williams, Curt A. Richter
In the emerging area of molecular electronics, fabrication of reliable metallic contacts remains one of the most critical challenges. Nanotransfer printing (nTP) is an attractive low-cost non-destructive technique to provide contact to organic monolayers

EEEL Technical Accomplishments

March 30, 2009
Author(s)
Erik M. Secula
This document describes the technical work of the Electronics and Electrical Engineering Laboratory. In this report, you will find that EEEL researchers are developing the world's most advanced sensors, providing advanced gamma ray imagers for astronomical

Test Chip to Evaluate Measurement Methods for Small Capacitances

March 30, 2009
Author(s)
Joseph J. Kopanski, Muhammad Y. Afridi, Chong Jiang, Curt A. Richter
We designed and fabricated a test chip to help us evaluate the performance of new approaches to measurement of small capacitances (femto-Farads to atto-Farads range). The test chip consists of an array of metal-oxide-semiconductor capacitors, metal

Small Angle X-Ray Scattering Measurements of Spatial Dependent Linewidth in Dense Nanoline Gratings

March 16, 2009
Author(s)
Chengqing C. Wang, Wei-En Fu, Bin Li, Huai Huang, Christopher Soles, Eric K. Lin, Wen-Li Wu, Paul S. Ho, Michael W. Cresswell
Small angle X-ray scattering (SAXS) was used to characterize the line cross section of nanoline gratings fabricated using electron beam lithography (EBL) patterning followed by anisotropic wet etching into silicon single crystal. SAXS results at normal

Channel Hot-Carrier Effect of 4H-SiC MOSFET

March 2, 2009
Author(s)
Liangchun (. Yu, Kin P. Cheung, John S. Suehle, Jason P. Campbell, Kuang Sheng, Aivars Lelis, Sei-Hyung Ryu
SiC MOSFET, as power device, can be expected to operate with high drain and high gate voltages, possibly leading to hot-carrier effect. However, hot-carrier degradation in a SiC MOSFET is difficult to detect because the as fabricated devices contain high

Controlled Formation and Resistivity Scaling of Nickel Silicide Nanolines

February 25, 2009
Author(s)
Bin Li, Zhiquan Luo, Paul S. Ho, Li Shi, Lew Rabenberg, JiPing Zhou, Richard A. Allen, Michael W. Cresswell
We demonstrate a top-down method to fabricate nickel mono-silicide (NiSi) nanolines with smooth side walls and linewidths down to 15 nm. Four probe electrical measurements revealed that the electrical resistivity at room temperature remained constant as

Comparison of Measurement Techniques for Linewidth Metrology on Advanced Photomasks

February 19, 2009
Author(s)
Stewart Smith, Andreas Tsiamis, Martin McCallum, Andrew Hourd, J Stevenson, Anthony Walton, Ronald G. Dixson, Richard A. Allen, James E. Potzick, Michael W. Cresswell, Ndubuisi George Orji
This paper compares electrical, optical, and atomic force microscope (AFM) measurements of critical dimension (CD)made on a chrome on quartz photomask. Test structures suitable for direct, on-mask electrical probing have been measured using the above three
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