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Electronics

Semiconductors

Search Publications

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Displaying 601 - 625 of 748

The molecular basis of mesophase ordering in a thiophene-based copolymer

February 18, 2009
Author(s)
Dean M. DeLongchamp, Regis J. Kline, Youngsuk Jung, Eric K. Lin, Daniel A. Fischer, David J. Gundlach, Andrew Moad, Lee J. Richter, Michael F. Toney, Martin Heeney, Iain McCulloch
The carrier mobility of poly(2,5-bis(3-alkylthiophen-2-yl) thieno[3,2-b]thiophene) semiconductors can be substantially enhanced after heating through a thermotropic mesophase transition, which causes a significant improvement in thin film structural order

Wear-out and Time Dependent Dielectric Breakdown in Silicon Oxides

January 14, 2009
Author(s)
John S. Suehle
This chapter will discuss the various physical mechanisms proposed for defect generation and dielectric breakdown in thin silicon dioxide films. Current understanding of the driving forces for defect generation will be presented as well as statistical

Local Structure of Cu in Cs8Na16Cu5Ge131 Type II Clathrate

January 8, 2009
Author(s)
Winnie K. Wong-Ng, Azzam Mansour, Matthew Beekman, George S. Nolas
We have used X-ray absorption spectroscopy (XAS) to investigate the local structure of Cu and Ge in the Cs8Na16Cu5Ge131 type II clathrate. We show that the local structure parameters, coordination number, and distances for Ge are consistent with those

A Standard Method for Measuring Wafer Bond Strength for MEMS Applications

December 23, 2008
Author(s)
Richard A. Allen, Janet M. Cassard, Winthrop A. Baylies, David T. Read, George D. Quinn, Frank W. DelRio, Kevin T. Turner, Michael Bernasch, Joerg Bagdahn
A round robin, to provide precision and bias data for SEMI standard MS5-1107, Test Method for Wafer Bond Strength Measurements Using Micro-Chevron Test Structures, in underway. The precision and bias data, combined with experience in applying the test

Silicon Nanowire NVM Cell Using High-k Dielectric Charge Storage Layer

December 5, 2008
Author(s)
Xiaoxiao Zhu, Yang Yang, Qiliang Li, D. E. Ioannou, John S. Suehle, Curt A. Richter
Si nanowire (SiNW) channel non-volatile memory (NVM) cells were fabricated by a 'self-alignment' process. First, a layer of thermal SiO2 was grown on a silicon wafer by dry oxidation, and the SiNWs were then grown by chemical vapor deposition in pre

Raman Spectroscopic Determination of Electron Concentration in n-Type GaSb

November 19, 2008
Author(s)
James E. Maslar, Wilbur S. Hurst, C Wang
Phonon-plasmon coupled mode Raman spectra of n-type GaSb were measured at room temperature as a function of electron concentration. These spectra were obtained using an optical system based on 752.55 nm excitation. Utilization of this wavelength permits

Extraction of Sheet Resistance and Line Width from All-Copper ECD Test Structures Fabricated from Silicon Preforms

November 3, 2008
Author(s)
Byron J. Shulver, Andrew S. Bunting, Alan Gundlach, Les I. Haworth, Alan W. Ross, Stewart Smith, Anthony J. Snell, J. T. Stevenson, Anthony Walton, Richard A. Allen, Michael W. Cresswell
Test structures have been fabricated to allow Electrical Critical Dimensions (ECD) to be extracted from copper features with dimensions comparable to those replicated in IC interconnect systems. The implementation of these structures is such that no

Organic single crystal field-effect transistors of a soluble anthradithiophene

October 22, 2008
Author(s)
Oana Jurchescu, Sankar Subramanian, R J. Kline, Steven D. Hudson, John E. Anthony, Thomas Jackson, David J. Gundlach
We use single crystals (grown by physical vapor transport) of a soluble oligomer to obtain a better understanding of the intrinsic properties, limitations and potential of these materials. Single crystals are well-suited for studies exploring the effects

The Origins of Random Telegraph Noise in Highly Scaled SiON nMOSFETs

October 17, 2008
Author(s)
Jason P. Campbell, Jin Qin, Kin P. Cheung, Liangchun (. Yu, John S. Suehle, A Oates, Kuang Sheng
Random telegraph noise (RTN) has recently become an important issue in advanced circuit performance. It has also recently been used as a tool for gate dielectric defect profiling. In this work, we show that the widely accepted model thought to govern RTN

The transient behavior of NBTI - A new prospective

October 17, 2008
Author(s)
Kin P. Cheung, Jason P. Campbell
The Negative-Bias-Temperature-Instability (NBTI) is currently one of the most serious reliability issues in advanced CMOS technology. Specifically, the fast recovery of NBTI degradation immediately after stress is removed has recently become a hot topic

Oxide Reliability of SiC MOS Devices

October 12, 2008
Author(s)
Liangchun (. Yu, Kin P. Cheung, Jason P. Campbell, John S. Suehle, Kuang Sheng
Silicon carbide possesses excellent material properties for high temperature, high frequency and high power applications. Among all the device structures, MOSFET has advantages such as low gate leakage current, easier device control etc., and therefore

An Accurate Capacitance-Voltage Measurement Method for Highly Leaky Devices

September 1, 2008
Author(s)
Yun Wang, Kin P. Cheung, Y.J. Choi, Byoung Hun Lee
Accurate CV measurement becomes extremely difficult in advanced CMOS technology due to high level of leakage across the gate dielectric. Recently, a new Time-Domain-Reflectometry (TDR) based CV measurement method was introduced. This new method offers ease

Improved Performance of Schottky Diodes on Pendeo-Epitaxial Gallium Nitride

September 1, 2008
Author(s)
Lawrence H. Robins, T Zheleva, M Derenge, D Ewing, P Shah, K Jones, U Lee
We designed experiments to investigate the role of the dislocation density on the performance of Schottky diodes fabricated on GaN material grown conventionally and by pendeo-epitaxy. Devices of varying geometries were fabricated on the low defect density

Power Conditioning System Technologies for High-Megawatt Fuel Cell Plants

August 7, 2008
Author(s)
Allen R. Hefner Jr.
High-megawatt Power Conditioning Systems (PCSs) are required to convert the low-voltage produced by fuel cell modules in central station scale plants to the very much higher voltage levels required for delivery to the grid. As part of a NIST/DOE

Recommended Terminology For Microwave Radiometry

August 1, 2008
Author(s)
James P. Randa, Janne Lahtinen, Adriano Camps, A. Gasiewski, Martti Hallikainen, David Leine V, Manuel Martin-Neira, Jeff Piepmeier, Philip Rosenkranz, Christopher Ruf, James Shiue, Niels Skou
We present recommended definitions for common terms in microwave remote-sensing radiometry. Terms are grouped into three chapters: General Terminology, Real-Aperture Radiometers, and Polarimetric Radiometry. AN alphabetical index lists the terms that are

Negative-Bias Temperature Instability Induced Electron Trapping

July 21, 2008
Author(s)
Jason P. Campbell, Kin P. Cheung, John S. Suehle, A Oates
Despite four decades of research, the physics responsible for the negative bias temperature instability (NBTI) in p-channel metal-oxide-silicon field-effect-transistors is still unresolved. The current NBTI debate focuses on the dominance of either a hole

Electron Trapping: An Unexpected Mechanism of NBTI and Its Implications

June 17, 2008
Author(s)
Jason P. Campbell, Kin P. Cheung, John S. Suehle, A Oates
We utilize fast-IdVg measurements to examine NBTI recovery over a time scale of 2usecs to 1000 seconds. The extracted DVTH and %GM degradation data clearly demonstrates the presence of hole as well as electron trapping and detrapping. The hole and electron
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