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Displaying 601 - 625 of 1445

Raman spectroscopy-enhanced IIT: In situ analysis of mechanically stressed polycrystalline Si thin films

July 8, 2014

Author(s)

Yvonne B. Gerbig, Chris A. Michaels, Robert F. Cook

Exposed to mechanical stress, semiconductor materials may phase transform, resulting in changes of crystallographic structure and material properties, rather than deform by plastic flow. As a consequence, prediction of the state and distribution of strain

Accurate Fast Capacitance Measurements for Reliable Device Characterization

July 1, 2014

Author(s)

Pragya R. Shrestha, Kin P. Cheung, Jason P. Campbell, Jason T. Ryan, Helmut Baumgart

As device dimensions continue to scale, transient phenomena are becoming increasingly more important to understand for both performance and reliability considerations. Recently, fast capacitances versus voltage (CV) measurements have been gaining attention

Non-destructive Measurement of the Residual Stresses in Copper Through-Silicon Vias using Synchrotron Based Micro-beam X-ray Diffraction

July 1, 2014

Author(s)

Chukwudi A. Okoro, Lyle E. Levine, Yaw S. Obeng, Klaus Hummler, Ruqing Xu

In this study, we report a new method for achieving depth resolved determination of the full stress tensor in buried Cu through-silicon vias (TSVs), using synchrotron based X-ray micro-diffraction technique. Two adjacent Cu TSVs were analyzed; one capped

Toxicity of carboxylated carbon nanotubes in endothelial cells is attenuated by stimulation of the autophagic flux associated with the release of nanomaterial in autophagic vesicles

July 1, 2014

Author(s)

Martina Orecna, Silvia De Paoli Lacerda, Olga Janouskova, Tseday Tegegn, Marcela Filapova, John E. Bonevich, Jan Simak

Here, we present a new method for the pharmacological modulation of the vascular toxicity of carbon nanotubes. We report that carboxylated multiwalled carbon nanotubes (MWCNTs) induce autophagosome accumulation in cultured human umbilical vein endothelial

Synchrotron-Based Measurement of the Impact of Thermal Cycling on the Evolution of Stresses in Cu Through-Silicon Via

June 30, 2014

Author(s)

Chukwudi A. Okoro, Lyle E. Levine, Ruqing Xu, Klaus Hummler, Yaw S. Obeng

One of the main causes of failure during the lifetime of microelectronics devices is their exposure to fluctuating temperatures. In this work, synchrotron-based X-ray micro-diffraction is used to study the evolution of stresses in copper through-silicon

Interface Engineering to Control Magnetic Field Effects of Organic-Based Devices by Using a Molecular Self-Assembled Monolayer

June 26, 2014

Author(s)

Hyuk-Jae Jang, Sujitra J. Pookpanratana, Alyssa N. Brigeman, Regis J. Kline, James I. Basham, David J. Gundlach, Christina A. Hacker, Oleg A. Kirillov, Oana Jurchescu, Curt A. Richter

Organic semiconductors hold immense promise for the development of a wide range of innovative devices with their excellent electronic and manufacturing characteristics. Of particular interest are non-magnetic organic semiconductors that show unusual

Metrology Needs for 2.5D/3D Interconnect

June 20, 2014

Author(s)

Victor H. Vartanian, Richard A. Allen, Klaus Humler, Steve Olsen, Brian Sapp, Larry Smith

This chapter will focus on the metrology steps to support 2.5D and 3D reference flows employing via-mid copper through-silicon via (TSV) processing, wafer thinning, and backside processing using a handle wafer and chip-to-chip bonding. Reference flows that

Defect and Microstructural Evolution in Thermally Cycled Cu Through-Silicon Vias

June 14, 2014

Author(s)

Chukwudi A. Okoro, James Marro, Yaw S. Obeng, Kathleen Richardson

In this study, the effect of thermal cycling on defect generation, microstructure, and the RF signal integrity of blind Cu through-silicon via (TSV) were investigated. Three different thermal cycling profiles were used; each differentiated by their peak

Discrete charge states in nanowire flash memory with multiple Ta2O5 charge-trapping stacks

June 9, 2014

Author(s)

Hao Zhu, John E. Bonevich, Haitao Li, Hui H. Yuan, Oleg A. Kirillov, Qiliang Li

In this work, multi-bit Flash memory based on self-aligned Si nanowire field-effect transistor and multiple Ta2O5 charge-trapping layers have been fabricated and fully characterized. The memory cells exhibited staircase, discrete charged states at small

Energy Control Paradigm for Compliance-Free Reliable Operation of RRAM

June 5, 2014

Author(s)

Pragya R. Shrestha, David M. Nminibapiel, Jihong Kim, Jason P. Campbell, Kin P. Cheung, Shweta Deora, G. Bersuker, Helmut Baumgart

We demonstrate reliable RRAM operation by controlling the forming energy via short voltage pulses (picosecond range) which eliminates the need for a current compliance element. We further show that the dissipated energy during forming and SET/RESET

X-Ray Micro-Beam Diffraction Measurement of the Effect of Thermal Cycling on Stress in Cu TSV: A Comparative Study

May 26, 2014

Author(s)

Chukwudi A. Okoro, Lyle E. Levine, Yaw S. Obeng, Klaus Hummler, Ruqing Xu

Microelectronic devices are subjected to constantly varying temperature conditions during their operational lifetime, which can lead to their failure. In this study, we examined the impact of thermal cycling on the evolution of stresses in Cu TSVs using

Metrology for 3D Integration

May 13, 2014

Author(s)

Richard A. Allen, Victor H. Vartanian, David T. Read, Winthrop A. Baylies

Three-dimensional stacked integrated circuit (3DS-IC) fabrication requires complex technologies such as high-aspect ratio through- silicon vias (TSVs), wafer thinning, thin wafer handling and processing, and bonding of thin wafers with complex patterned

Microwave-Based Metrology Platform Development: Application of Broad-Band RF Metrology to Integrated Circuit Reliability Analyses

May 12, 2014

Author(s)

Lin You, Chukwudi A. Okoro, Jungjoon Ahn, Joseph Kopanski, Yaw S. Obeng

In this paper we describe the development of a suite of techniques, based on the application of high frequency electromagnetic waves, to probe material and structural changes in integrated circuits under various external perturbations. We discuss how these