Wang, Y.
, Cheung, K.
, Choi, Y.
and Lee, B.
(2008),
An Accurate Capacitance-Voltage Measurement Method for Highly Leaky Devices, IEEE Transactions on Electron Devices, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32746
(Accessed January 25, 2025)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
An Accurate Capacitance-Voltage Measurement Method for Highly Leaky Devices
Published
Author(s)
Yun Wang, , Y.J. Choi, Byoung Hun Lee
Abstract
Accurate CV measurement becomes extremely difficult in advanced CMOS technology due to high level of leakage across the gate dielectric. Recently, a new Time-Domain-Reflectometry (TDR) based CV measurement method was introduced. This new method offers ease of use and high accuracy while able to handle very high level of leakage current. It also allows series resistance and overlap capacitance to be extracted simultaneously and accurately without the need for additional measurement. In this paper, the theoretical basis of the TDR CV method is described in detail. In addition, we include a detailed error analysis to provide a complete documentation of the TDR CV measurement method.Citation
IEEE Transactions on Electron Devices
Volume
55
Pub Type
Journals
Download Paper
Keywords
capacitance, CV, thin oxide, time-domain-reflectometry, CMOS
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created August 31, 2008, Updated October 12, 2021