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A Standard Method for Measuring Wafer Bond Strength for MEMS Applications

Published

Author(s)

Richard A. Allen, Janet M. Cassard, Winthrop A. Baylies, David T. Read, George D. Quinn, Frank W. DelRio, Kevin T. Turner, Michael Bernasch, Joerg Bagdahn

Abstract

A round robin, to provide precision and bias data for SEMI standard MS5-1107, Test Method for Wafer Bond Strength Measurements Using Micro-Chevron Test Structures, in underway. The precision and bias data, combined with experience in applying the test instructions included in MS5-1107, will provide the basis for an updated version of MS5. Measurements at the pilot lab have been completed and the round robin is on-going at six additional laboratories.
Volume
16
Issue
8
Conference Dates
October 12-18, 2008
Conference Location
Honolulu, HI
Conference Title
Proc. ECS: E11 - Semiconductor Wafer Bonding 10: Science, Technology, and Applications

Keywords

micro-chevron, wafer bond strength measurement, SEMI MS5

Citation

Allen, R. , Cassard, J. , Baylies, W. , Read, D. , Quinn, G. , DelRio, F. , Turner, K. , Bernasch, M. and Bagdahn, J. (2008), A Standard Method for Measuring Wafer Bond Strength for MEMS Applications, Proc. ECS: E11 - Semiconductor Wafer Bonding 10: Science, Technology, and Applications, Honolulu, HI, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=33132 (Accessed June 15, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created December 23, 2008, Updated February 19, 2017