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A Standard Method for Measuring Wafer Bond Strength for MEMS Applications
Published
Author(s)
Richard A. Allen, Janet M. Cassard, Winthrop A. Baylies, David T. Read, George D. Quinn, Frank W. DelRio, Kevin T. Turner, Michael Bernasch, Joerg Bagdahn
Abstract
A round robin, to provide precision and bias data for SEMI standard MS5-1107, Test Method for Wafer Bond Strength Measurements Using Micro-Chevron Test Structures, in underway. The precision and bias data, combined with experience in applying the test instructions included in MS5-1107, will provide the basis for an updated version of MS5. Measurements at the pilot lab have been completed and the round robin is on-going at six additional laboratories.
Volume
16
Issue
8
Conference Dates
October 12-18, 2008
Conference Location
Honolulu, HI
Conference Title
Proc. ECS: E11 - Semiconductor Wafer Bonding 10: Science, Technology, and Applications
Allen, R.
, Cassard, J.
, Baylies, W.
, Read, D.
, Quinn, G.
, DelRio, F.
, Turner, K.
, Bernasch, M.
and Bagdahn, J.
(2008),
A Standard Method for Measuring Wafer Bond Strength for MEMS Applications, Proc. ECS: E11 - Semiconductor Wafer Bonding 10: Science, Technology, and Applications, Honolulu, HI, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=33132
(Accessed October 10, 2025)