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Electronics

Semiconductors

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Displaying 626 - 650 of 751

Negative-Bias Temperature Instability Induced Electron Trapping

July 21, 2008
Author(s)
Jason P. Campbell, Kin P. Cheung, John S. Suehle, A Oates
Despite four decades of research, the physics responsible for the negative bias temperature instability (NBTI) in p-channel metal-oxide-silicon field-effect-transistors is still unresolved. The current NBTI debate focuses on the dominance of either a hole

Electron Trapping: An Unexpected Mechanism of NBTI and Its Implications

June 17, 2008
Author(s)
Jason P. Campbell, Kin P. Cheung, John S. Suehle, A Oates
We utilize fast-IdVg measurements to examine NBTI recovery over a time scale of 2usecs to 1000 seconds. The extracted DVTH and %GM degradation data clearly demonstrates the presence of hole as well as electron trapping and detrapping. The hole and electron

Evidence for an Indirect Gap in B-FeSi2 Epilayers by Photoreflectance Spectroscopy

May 27, 2008
Author(s)
Anthony Birdwell, Christopher Littler, R Glosser, M Rebien, W Henrion, P Stauss, G Behr
Photoreflectance spectra obtained from epitaxial films of semiconducting Β-FeSi2 exhibit complex line shapes resulting from a variety of optical transitions. While we have previously established a direct gap at 0.934{plus or minus}0.002 eV at 75 K, we find

Combinatorial study of the crystallinity boundary in the HfO2-TiO2-Y2O3 system using pulsed laser deposition library thin films

May 16, 2008
Author(s)
Peter K. Schenck, Jennifer L. Klamo, Nabil Bassim, Peter G. Burke, Yvonne B. Gerbig, Martin L. Green
HfO2-TiO2-Y2O3 is an interesting high-k dielectric system. Combinatorial library films of this system enable the study of the role of composition on phase formation as well as optical and mechanical properties. A library film of this system deposited at

The relationship between local order, long range order, and sub-bandgap defects in hafnium oxide and hafnium silicate films

May 9, 2008
Author(s)
D. H. Hill, Robert A. Bartynski, Nhan Van Nguyen, Albert Davydov, Deane Chandler-Horowitz, Martin M. Frank
We have measured X-ray absorption spectra (XAS) at the oxygen K-edge for hafnium oxide (HfO2) films grown by chemical vapor deposition (CVD) and atomic layer deposition (ALD), as well as hafnium silicate (HfSiO) films grown by CVD.  The XAS results are

Investigation of Electron Hole Recombination-Activated Partial Dislocations and Their Behavior in 4H-SiC Epitaxial Layers

May 8, 2008
Author(s)
Yi Chen, Ning Zhang, M Dudley, JOSHUA CALDWELL, Kendrick Liu, ROBERT STAHLBUSH, XIANRONG HUANG, A T. Macrander, David R. Black
Electron hole recombination-activated partial dislocations in 4H silicon carbide homoepitaxial layers and their behavior have been studied using synchrotron X-ray topography and electroluminescence. Stacking faults whose expansion was activated by electron

STRESS-INDUCED DEFECT GENERATION IN HFO2/SIO2 STACKS OBSERVED BY USING CHARGE PUMPING AND LOW FREQUENCY NOISE MEASUREMENTS

April 30, 2008
Author(s)
Hao Xiong, Dawei Heh, Shuo Yang, Moshe Gurfinkel, Gennadi Bersuker, D. E. Ioannou, Curt A. Richter, Kin P. Cheung, John S. Suehle
A novel approach combining the low frequency drain current noise and the frequency-dependent charge pumping techniques has been employed to extract the trap densities in both the interfacial SiO2 layer and high-k layer in the n-type MOSFETs with HfO2/SiO2

Line Width Roughness and Cross Sectional Measurements of Sub-50 nm Structures with CD-SAXS and CD-SEM

March 24, 2008
Author(s)
Chengqing C. Wang, Ronald L. Jones, Kwang-Woo Choi, Christopher L. Soles, Eric K. Lin, Wen-Li Wu, James S. Clarke, John S. Villarrubia, Benjamin Bunday
Critical dimension small angle x-ray scattering (CD-SAXS) is a measurement platform which is capable of measuring the average cross section and sidewall roughness in patterns ranging from (10 to 500) nm in pitch with sub nm precision. These capabilities

Internal Photoemission Spectroscopy of [TaN/TaSiN] and [TaN/TaCN] Metal Stacks On SiO2 and [HfO2 / SiO2] Dielectric Stack.

March 6, 2008
Author(s)
Nhan V. Nguyen, Hao Xiong, John S. Suehle, Oleg A. Kirillov, Eric Vogel, Prashant Majhi, Huang-Chun Wen
Metal gates have been intensively searched to replace the poly-silicon for the next generation metal-oxide-semiconductor field-effect transistor. The barrier height (??0) at their interfaces with a gate dielectric must be known to select a suitable metal

Performance Analysis of 10 kV, 100 A SiC Half-Bridge Power Modules

March 3, 2008
Author(s)
Allen R. Hefner Jr.
Abstract: The DARPA Wide Bandgap Semiconductor Technology (WBGS) High Power Electronics (HPE) Phase II program is developing high-voltage, high-frequency SiC device and package technology needed to meet the specific program objectives for a 13.8 kV, 2.75

Modeling the Effect of Finite Size Gratings on Scatterometry Measurements

February 25, 2008
Author(s)
Elizabeth Kenyon, Michael W. Cresswell, Heather Patrick, Thomas Germer
The interpretation of scatterometry measurements generally assumes that the grating extends over an area large enough to intercept all the illumination provided by an incident beam. However, in practice, the grat-ings used in scatterometry are relatively

Circuit Simulation Model for a 100 A, 10 kV Half-bridge SiC MOSFET/JBS Power Module

February 24, 2008
Author(s)
Tam H. Duong, Angel Rivera-Lopez, Allen R. Hefner Jr., Jose M. Ortiz
This paper presents the simulation of a 100 A, 10 kV Silicon Carbide (SiC) half-bridge power module operating at 20 kHz in a behavioral boost converter circuit. In the half-bridge module, 10 kV SiC power MOSFETs are used as the upper and lower switches

High Sensitivity FTIR-ATR Study of Ultra-Thin Zr02 Films: A Study of Phase Change

February 12, 2008
Author(s)
Safak Sayan, Deane Chandler-Horowitz, Nhan Van Nguyen, James R. Ehrstein, Mark Croft
Fourier Transform Infrared spectroscopy (FTIR) using the Attenuated Total Reflection (ATR) method was performed in the mid-IR spectral region on ultrathin ZrO2 films deposited on silicon wafers. A vibrational mode near 710 cm-1 was observed that undergoes

Green Fluorescent Protein in Inertially Injected Aqueous Nanodroplets

January 30, 2008
Author(s)
Jianyong Tang, Ana Jofre, Geoffrey Lowman, Rani Kishore, Joseph E. Reiner, Kristian Helmerson, Lori S. Goldner, M E. Greene
We inertially inject and study the contents of optically trappable aqueous nanodroplets (hydrosomes) emulsified in a perfluorinated matrix. A new piezoelectric actuated device for production of single hydrosomes on demand is introduced. Hydrosomes

Current Status of the Quantum Metrology Triangle

January 18, 2008
Author(s)
Mark W. Keller
The quantum metrology triangle is a test of the consistency of three quantum electrical standards: the single-electron tunneling current standard, the Josephson voltage standard, and the quantum Hall resistance standard. This paper considers what is known

Raman Spectroscopic Determination of Hole Concentration in p-Type GaSb

January 2, 2008
Author(s)
James E. Maslar, Wilbur S. Hurst, C Wang
Room temperature p-type GaSb bulk coupled mode spectra were measured as a function hole concentration. These spectra were obtained using an optical system based on 752.55 nm excitation in order to obtain more sensitivity to bulk GaSb coupled mode

Comparison of SEM and HRTEM CD Measurements Extracted from Test-Structures Having Feature Linewidths from 40 nm to 240 nm

January 1, 2008
Author(s)
Michael W. Cresswell, Richard A. Allen, William F. Guthrie, Christine E. Murabito, Ronald G. Dixson, Amy Hunt
CD (Critical Diminsion) measurements have been extracted from SEM (Scanning Electron Microscopy) and HRTEM (High Resolution Transmission Electron Microscopy) images of the same set of monocrystalline silicon features having linewidths between 40 nm and 240
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