NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.

Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.

U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Electronics

Semiconductors

Search Publications

Search Title, Abstract, Conference, Citation, Keyword or Author
  • Published Date
Displaying 651 - 675 of 748

The Direct Patterning of Nanoporous Interlayer Dielectric Insulator Films by Nanoimprint Lithography

October 2, 2007
Author(s)
Hyun Wook Ro, Ronald L. Jones, H Peng, Daniel R. Hines, Hae-Jeong Lee, Eric K. Lin, Alamgir Karim, Do Y. Yoon, D Gidley, Christopher L. Soles
Directly patterning dielectric insulator materials via nanoimprint lithography has the potential to simplify fabrication processes and significantly reduce the manufacturing costs for semiconductor devices. However, the prospect of mechanically forming

Raman Spectroscopy of n-Type and p-Type GaSb with Multiple Excitation Wavelengths

October 1, 2007
Author(s)
James E. Maslar, Wilbur S. Hurst, C Wang
The interpretation of Raman spectra of GaSb can be complicated by the presence of a so-called surface space-charge region (SSCR), resulting in an inhomogeneous near-surface Raman scattering environment. To fully interpret Raman spectra, it is important to

Tracing Electronic Pathways in Molecules Using Inelastic Tunneling Spectroscopy

September 4, 2007
Author(s)
Alessandro Troisi, J M. Beebe, Laura B. Picraux, Roger D. van Zee, D R. Stewart, M Ratner, James G. Kushmerick
Using inelastic electron tunneling spectroscopy (IETS) to measure the vibronic structure of non-equilibrium molecular transport, aided by a quantitative interpretation scheme based on non-equilibrium Greens function/density functional theory methods, we

Building Electronic Function Into Nanoscale Molecular Architectures

August 30, 2007
Author(s)
H D. Abruna, M Ratner, Roger D. van Zee
The use of molecules in electronic circuit has been the subject of recent study. Experimentally, two-terminal, molecular rectifiers have been demonstrated, three-terminal, single-molecule transistors demonstrated, and electromechanical molecular switches

Energy-Level Alignment and Work Function Shifts for Thiol-Bound Monolayers of Conjugated Molecules Self-Assembled on Ag, Cu, Au, and Pt

July 1, 2007
Author(s)
Christopher D. Zangmeister, Laura B. Picraux, Roger D. van Zee, Yuxing Yao, J M. Tour
Photoemission spectra have been used to determine the energy-level alignment and work function of monolayers of 4,4'-bis-(phenylethynyl)benzenethiol, 2 naphthalene thiol, and 3-(naphthalen-2-yl)propane-1-thiol self-assembled on Ag, Cu, Au, and Pt. For each

Extracting Electron Densities in N-Type GaAs from Raman Spectra: Theory

July 1, 2007
Author(s)
Herbert S. Bennett
Raman measurements are proposed as a non-destructive method for wafer acceptance tests of carrier density. The interpretation of Raman spectra to determine the majority electron density in n-type semiconductors requires an interdisciplinary effort

I-NEMI 2007 Organic and Printed Electronics Roadmap

April 2, 2007
Author(s)
Jan Obrzut, Regis J. Kline, Eric K. Lin, David J. Gundlach, Daniel Gamota
This roadmap provides an overview of the most critical technologies necessary for commercial launch and market diffusion of organic & printed electronics based products. To the best of our knowledge, this roadmap is the first of its kind and as such should

On-Wafer Measurement of Transistor Noise Parameters at NIST

April 1, 2007
Author(s)
James P. Randa, Dave K. Walker
NIST has developed the capability to measure noise parameters on a wafer int he 1-12.4 GHz range. We describe the measurement method and the uncertainty analysis and present results of measurements on a very poorly matched transistor.

Extraction of Sheet Resistance and Linewidth from All-Copper ECD Test-Structures Fabricated from Silicon Preforms

March 22, 2007
Author(s)
Byron J. Shulver, Andrew S. Bunting, Alan Gundlach, Les I. Haworth, Alan W. Ross, A. J. Smith, Anthony J. Snell, J. T. Stevenson, Anthony Walton, Michael W. Cresswell, Richard A. Allen
Test Structures for the extraction of Electrical Critical Dimensions (ECD) and having all-copper features with no barrier metal films have been fabricated. The advantage of this approach is that electrical measurements provide a non-destructive method for

Reliability and Characterization Challenges for Nano-Scale Electronic Devices

March 14, 2007
Author(s)
John S. Suehle, Hao Xiong, Moshe Gurfinkel
Scaling electronic devices to nano-scale dimensions may introduce unforeseen physical mechanisms that may seriously compromise device reliability. It has been discussed that as individual atoms comprise a larger fraction of the actual device area, defects

Mechanically Robust Spin-On Organosilicates Glasses for Nanoporous Applications

February 7, 2007
Author(s)
Hyun Wook Ro, K Char, Eun-Chae Jeon, H C. Kim, Dongil Kwon, Hae-Jeong Lee, J. H. Lee, Hee-Woo Rhee, Christopher L. Soles, Do Y. Yoon
An increasing number of technologies demand nanoporous materials with vastly improved physical, mechanical and thermal properties. This manuscript develops the microstructural basis for synthesizing organosilicate glasses (OSGs) with unprecedented thermal

Length Dependent Uptake of DNA-Wrapped Single Walled Carbon Nanotubes

January 1, 2007
Author(s)
Matthew Becker, Jeffrey Fagan, Nathan D. Gallant, Barry J. Bauer, Vardhan Bajpai, Erik K. Hobbie, Silvia H. De Paoli Lacerda, Kalman D. Migler, J P. Jakupciak
DNA-wrapped single wall carbon nanotubes (SWNTs) with broad length distributions are shown to reduce the viability of IMR90 primary human lung fibroblast cells above the (23 to 25) ug/mL concentration regime. Furthermore using well-defined length fractions

Will Future Measurement Needs for the Semiconductor Industry Be Met?

January 1, 2007
Author(s)
Herbert S. Bennett, Alain C. Diebold, C. M. Garner
We present an assessment of the state of the nation''s measurement system in its ability to meet the metrology needs of the semiconductor industry. Lacking an acceptable metric for the assessing the health of metrology for the semiconductor industry, we

Future Perspective of RF and Analog/Mixed-Signal Integrated Circuit Technologies for Mobile Communications

October 23, 2006
Author(s)
Bin Zhao, Herbert S. Bennett, Julio Costa, Peter Cottrell, Anthony A. Immorlica, Margaret Huang, Jan-Erik Mueller, Marco Racanelli, Hisashi Shichijo, Charles E. Weitzel
Radio frequency (RF) and analog/mixed-signal (AMS) integrated circuits (ICs) are key enabling components for mobile and wireless communications and their advancements continue to drive the growth of the related semiconductor market. The circuit and

RF, Analog, and Mixed Signal Technologies for Communication ICs - An ITRS Perspective

October 10, 2006
Author(s)
Margaret Huang, Herbert S. Bennett, Julio Costa, Peter Cotrell, Anthony A. Immorlica, Jan-Erik Meuller, Charles E. Weitzel, Marco Racaneli, Hisashi Schichijo, Bin Zhao
The International Technology Roadmap for Semiconductor (ITRS) Radio Frequency and Analog/Mixed-Signal (RF and AMS) Wireless Technology Working Group (TWG) addresses device technologies for wireless communications covering both silicon-based and III-V

Electrostatically gated Si devices: Coulomb blockade and barrier capacitance

August 10, 2006
Author(s)
Neil M. Zimmerman, Akira Fujiwara, Hiroshi Inokawa, Yasuo Takahashi
Using a new device resembling a nano-CCD, and measuring the Coulomb blockade, we identify a new parameter, the "barrier capacitance". We then show how this parameter can be used to learn about the underlying shape of the energy barrier under a gate with a

On-Chip Electrostatic Discharge Protection for CMOS Gas Sensor Systems-on-a-Chip (SoC)

August 1, 2006
Author(s)
Javier Salcedo, Juin J. Liou, Muhammad Y. Afridi, Allen R. Hefner Jr.
An on-chip Electrostatic Discharge (ESD) protection scheme is demonstrated for MicroElectroMechanical Systems (MEMS)-based Embedded Sensor (ES) System-on-a-Chip (SoC). The ESD protection scheme is implemented with ground-referenced multifinger thyristor
Was this page helpful?