Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Three-dimensional deep sub-wavelength defect detection using (lambda) = 193 nm optical microscopy

Published

Author(s)

Bryan M. Barnes, Martin Y. Sohn, Francois R. Goasmat, Hui Zhou, Andras Vladar, Richard M. Silver, Abraham Arceo

Abstract

Identifying defects in photolithographic patterning is a persistent challenge in semiconductor manufacturing. Well-established optical methods in current use are jeopardized by upcoming sub-20 nm device dimensions. Volumetric processing of focus-resolved images of defects is presented using simulated and experimental examples. Defects are revealed using 193 nm light as the focus and illumination conditions are optimized. The data analysis protocol exploits the focal range of defect-based scattering leading to the observation of defects as small as 16 ± 2 nm (k=1) in critical dimension. Quantitative metrics to compare two-dimensional and three-dimensional imaging indicate possible fourfold improvements in sensitivity using these methods.
Citation
Optics Express
Volume
21
Issue
22

Keywords

Defect metrology, Volumetric data analysis, Subwavelength structures, Three-dimensional image processing, Industrial inspection, Defect understanding

Citation

Barnes, B. , Sohn, M. , Goasmat, F. , Zhou, H. , Vladar, A. , Silver, R. and Arceo, A. (2013), Three-dimensional deep sub-wavelength defect detection using (lambda) = 193 nm optical microscopy, Optics Express, [online], https://doi.org/10.1364/OE.21.026219 (Accessed June 22, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created October 25, 2013, Updated November 10, 2018