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Electronics

Semiconductors

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Displaying 676 - 700 of 748

Electrochemical Study of Chitosan Films Deposited on Gold Electrodes

July 28, 2006
Author(s)
Rebecca A. Zangmeister, J J. Park, G W. Rubloff, Michael J. Tarlov
We report the electrochemical characterization of chitosan films deposited on gold electrodes. Cyclic voltammetry was used to characterize the deposition and electroactivity of chitosan coated gold electrodes. Chitosan films were found to deposit at a gold

On-Wafer Noise-Parameter Measurements at NIST

July 14, 2006
Author(s)
James P. Randa, Dave K. Walker
NIST has developed the capability to measure noise parameters on a wafer int he 1-12.4 GHz range. In this paper we briefly describe the measurement methods and the uncertainty analysis and present results of measurements on a very poorly matched transistor

Terahertz radiometer design for traceable noise-temperature measurements

July 14, 2006
Author(s)
Eyal Gerecht, Dazhen Gu, James P. Randa, Dave K. Walker, Robert L. Billinger
We report on design of a radiometer for traceable noise-temperature measurements at terahertz frequencies, including noise measurements on cryogenic IF components, development and test of quasi-optical adapter technology, development of black body

Reverse Noise Measurement and Use in Device Characterization

June 10, 2006
Author(s)
James P. Randa, Tom McKay, Susan L. Sweeney, Dave K. Walker, Lawrence Wagner, David R. Greenberg, Jon Tao, G. Ali Rezvani
We review the concept of reverse noise measurements in the context of on-wafer transistor noise characterization. Several different applications of reverse noise measurements are suggested and demonstrated. Reverse measurements can be used to check

Nonlinear charge transport in semiconducting polythiophene

May 23, 2006
Author(s)
Jan Obrzut
We measured the complex impedance and nonlinear conductivity for regioregular poly(3-hexylthiophene) (P3HT) by recording and analyzing AC waveforms at their fundamental frequency and at higher order harmonic frequencies. We used 50 µm thick films of P3HT

RM 8111: Development of a Prototype Linewidth Standard

May 1, 2006
Author(s)
Michael W. Cresswell, William Gutherie, R. Dixon, Richard A. Allen, Christine E. Murabito, Joaquin (. Martinez
Staff of the Semiconductor Electronics Division, the Information Technology Laboratory, and the Precision Engineering Laboratory at NIST, in collaboration with VLSI Standards, Inc., of San Jose, California, have developed a new generation of prototype

Design and Fabrication of a Copper Test Structure as a Electrical Critical Dimension Reference

April 1, 2006
Author(s)
Byron J. Shulver, Andrew S. Bunting, Alan Gundlach, Les I. Haworth, Alan W. Ross, Anthony J. Snell, J. T. Stevenson, Anthony Walton, Richard A. Allen, Michael W. Cresswell
A novel copper damascene process is reported for the implementation of Electrical Critical Dimension (ECD) reference material. The method of fabrication first creates an initial 'silicon preform' whose linewidth is transfered into a trench using a silicon

Spatial Distributions of Trapping Centers in HfO2/SiO2 Stacked Dielectrics

April 1, 2006
Author(s)
Da-Wei Heh, Eric M. Vogel, J B. Bernstein, Chadwin Yang, George A. Brown, Gennadi Bersuker, Pui-Yee Hung, Alain C. Diebold
An analysis methodology basd on charge pumping (CP) measurement was applied to extract the spatial depth profile of traps in the SiO2/HfO2 gate stacks. This analysis indicates that by changing CP measurement parameters it is possible to probe traps at

Single electron tunnelling transistor with tunable barriers using silicon nanowire MOSFET

March 7, 2006
Author(s)
Akira Fujiwara, Hiroshi Inokawa, Kenji Yamazaki, Hideo Namatsu, Yasuo Takahashi, Neil M. Zimmerman, Stuart Martin
Single-electron tunnelling (SET) transistors 1 are now of great and wide interest as basic elements for future applications such as low-power nanoelecronics 2 and read-out electrometer for solid-state quantum computing 3. Silicon SET devices 4 have great

Precision Measurement Method for Cryogenic Amplifier Noise Temperatures Below 5 K

March 1, 2006
Author(s)
James P. Randa, Eyal Gerecht, Dazhen Gu, Robert L. Billinger
We report precision measurements of the effective input noise temperature of a cryogenic (liquid helium temperature) MMIC amplifier at the amplifier reference planes within the cryostat. A method is given for characterizing and removing the effect of the

Comparison of scanning capacitance microscopy and scanning Kelvin probe microscopy in determining two-dimensional doping profiles of Si homostructures

February 1, 2006
Author(s)
Seong-Eun Park, Nhan V. Nguyen, Joseph J. Kopanski, John S. Suehle, Eric M. Vogel
Two-dimensional (2-D) doping profiles of differently doped Si homostructures were investigated by scanning capacitance microscopy (SCM) and scanning Kelvin probe microscopy (SKPM). The calibrated doping concentration of the n-step Si layers was in the

Characterization System for Embedded Gas Sensor Systems-on-a-Chip

December 1, 2005
Author(s)
Muhammad Y. Afridi, Allen R. Hefner Jr., Colleen E. Hood, Richard E. Cavicchi, Stephen Semancik
A characterization system is presented for evaluating critical functions of a microhotplate-based embedded gas-sensor for system-on-a-chip applications. The system uses a virtual instrument interface to control parts-per-billion (ppb) gas concentration

INTER-LABORATORY COMPARISON OF NOISE-PARAMETER MEASUREMENTS ON CMOS DEVICES WITH 0.12 um GATE LENGTH

December 1, 2005
Author(s)
James P. Randa, Susan L. Sweeney, Tom McKay, Dave K. Walker, David R. Greenberg, Jon Tao, Judah Mendez, G. Ali Rezvani, John J. Pekarik
We present results of an interlaboratory comparison of S-parameter and noise-parameter measurements performed on 0.12 υm gate-length CMOS transistors. Copies of the same device were measured at three different laboratories (IBM, NIST, RFMD), and the

Effect of Nitrogen on Band Alignment in HfSiON Gate Dielectrics

November 22, 2005
Author(s)
Safak Sayan, Nhan V. Nguyen, James R. Ehrstein, James J. Chambers, Mark R. Visokay, Manuel Quevedo-Lopez, Luigi Colombo, T Yoder, Igor Levin, Daniel Fischer, M Paunescu, Ozgur Celik, Eric Garfunkel
We have studied the band alignment of HfSiO and HfSiON films by soft x-ray photoemission (SXPS), oxygen K-edge x-ray absorption (XAS), and spectroscopic ellipsometry. Nitridation of HfSiO reduced the band gap by 1.50+- 0.05eV and the valence and conduction

Optical Bandgaps and Composition Dependence of Hafnium Aluminate Thin Films grown by Atomic Layer Chemical Vapor Deposition

November 17, 2005
Author(s)
Nhan V. Nguyen, Safak Sayan, Igor Levin, James R. Ehrstein, I.J.R. Baumvol, C. Driemeier, L Wielunski, Pui-Yee Hung, Alain C. Diebold
Hafnium-aluminate (HfAlO) films grown on Si by Atomic Layer Chemical Vapor Deposition (ALCVD) of different aluminum contents were investigated in this article. Vacuum Ultra-Violet Spectroscopic Ellipsometry (VUV-SE), high Resolution Transmission Electron
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