Analysis of Implanted Silicon Dopant Profiles

Published

September 1, 2013

Author(s)

B. P. Geiser, Eric B. Steel, Karen T. Henry, D. Olson, T.J. Prosa

Abstract

Atom probe tomography implant dose measurements are reported for National Institute of Standards and Technology Standard Reference Material 2134 (As implant). Efforts were taken to manufacture specimens with limited variation in size and shape to minimize variation in physical reconstruction parameters. A tip-profile reconstruction was utilized where measurements of tip-profile, post-analysis specimen radius and sphere-to-cone radius ratio were required as inputs into the reconstruction process. A variation of 4% is observed in the dose measurement under these conditions. Various considerations necessary to narrow the observed variation in measured dose, toward the limit imposed by counting statistics, are discussed.

Citation

Ultramicroscopy

Volume

132

Issue

0

Pub Type

Journals

Keywords

atom probe tomography, dopant profile, semiconductor

Citation

Geiser, B. , Steel, E. , Henry, K. , Olson, D. and Prosa, T. (2013), Analysis of Implanted Silicon Dopant Profiles, Ultramicroscopy (Accessed April 4, 2025)