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Electronics

Semiconductors

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Displaying 701 - 725 of 1446

The Impact of Characteristic Impedance on Waveform Calibrations

June 7, 2013
Author(s)
Dylan F. Williams, Jeffrey A. Jargon, Paul D. Hale
We examine the impact of the characteristic impedance on mismatch corrections for temporal waveform calibrations based on high-speed electro-optic sampling measurements. We show that failing to measure and account for the characteristic impedance of

Effect of Organic SAMs on the Evolution of Strength of Silicon Nanostructures

June 3, 2013
Author(s)
Scott Grutzik, Brian G. Bush, Frank W. DelRio, Richard S. Gates, Melissa Hines, Alan Zehnder
The ability to accurately predict the strength of nanoscale, single crystal structures is critical in micro- and nano-electromechanical systems (MEMS and NEMS) design. Because of the small length scales involved failure does not always follow the same

Accelerated Stress Test Assessment of Through-Silicon Vias Using RF Signals

June 1, 2013
Author(s)
Chukwudi A. Okoro, Pavel Kabos, Jan Obrzut, Klaus Hummler, Yaw S. Obeng
In this work, radio frequency (RF) signal is demonstrated as an effective metrology tool for the assessment of the effect of thermal cycling on the reliability of through-silicon via (TSV) stacked dies. It was found that RF signal integrity of TSV daisy

Reliability Monitoring For Highly Leaky Devices

May 31, 2013
Author(s)
Jason T. Ryan, Jason P. Campbell, Kin P. Cheung, John S. Suehle, Richard Southwick, Anthony Oates
We demonstrate a new charge pumping (CP) methodology, frequency modulated CP (FMCP), that robustly treats metrology challenges associated with high gate leakage current. By moving to an AC coupled measurement, we are able to easily resolve small CP signals

Use of RF-Based Technique as a Metrology Tool for TSV Reliability Analysis

May 28, 2013
Author(s)
Chukwudi A. Okoro, Yaw S. Obeng, Jan Obrzut, Pavel Kabos, Klaus Hummler
In this work, we used radio frequency (RF) based measurement technique is used as a prognostic tool for the assessment of the effect of thermal cycling on the reliability of through-silicon via (TSV) stacked dies. It was found that RF signal integrity in

X-Ray Micro-Beam Diffraction Determination of Full Stress Tensors in Cu TSVs

May 28, 2013
Author(s)
Chukwudi A. Okoro, Lyle E. Levine, Oleg A. Kirillov, Yaw S. Obeng, Ruqing Xu, Jonathan Z. Tischler, Wenjun Liu, Klaus Hummler
We report the first non-destructive, depth resolved determination of the full stress tensor in Cu through-silicon vias (TSVs), using synchrotron based micro-beam X-ray diffraction. Two adjacent Cu TSVs were studied; one deliberately capped with SiO2, the

Studies of photoconductivity and FET behavior in examining drift mobility, surface depletion, and transient effects in Si-doped GaN nanowires examined in vacuum and air

May 3, 2013
Author(s)
Norman A. Sanford, Lawrence H. Robins, Paul T. Blanchard, K. Soria, B. Klein, Kristine A. Bertness, John B. Schlager, Aric W. Sanders
Variable intensity photoconductivity (PC) performed under vacuum at 325 nm was used to estimate drift mobility and negative surface charge density sigma for c-axis oriented Si-doped GaN nanowires (NWs). In this approach we assumed that sigma was

Thermo-Mechanical Characterization of AuIn Transient Liquid Phase Bonding Die-Attach

April 9, 2013
Author(s)
Brian J. Grummel, Habib A. Mustain, Z. J. Shen, Allen R. Hefner Jr.
In next-generation wide-bandgap power electronics, the semiconductor device die-attach is of critical importance, for this transient liquid phase (TLP) bonding is a promising and effective die-attach technique. In this work, the thermal and mechanical

Critical Dimension small angel X-ray scattering measurements of FinFET and 3D memory structures

April 8, 2013
Author(s)
Regis J. Kline, Daniel F. Sunday, Chengqing C. Wang, Wen-Li Wu, Charlie Settens, Bunday Benjamin, Brad Thiel, Matyi Richard
Critical dimension small angle X-ray scattering (CD-SAXS) has been identified as a potential solution for measurement of nanoscale lithographic features by interrogating structures with sub-nanometer wavelength radiation in transmission geometry. The most
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