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Electronics

Semiconductors

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Displaying 726 - 750 of 1446

Graphene as Transparent Electrode for Direct Observation of Hole Photoemission from Silicon to Oxide

March 27, 2013
Author(s)
Rusen Yan, Qin Zhang, Oleg A. Kirillov, Wei Li, James I. Basham, Alexander G. Boosalis, Xuelei X. Liang, Debdeep Jena, Curt A. Richter, Alan C. Seabaugh, David J. Gundlach, Huili G. Xing, Nhan V. Nguyen
The outstanding electrical and optical properties of graphene make it an excellent alternative as a transparent electrode. Here we demonstrate the application of graphene as collector material in internal photoemission (IPE) spectroscopy; enabling the

The Art in Science of microTAS (Editorial)

March 12, 2013
Author(s)
Michael Gaitan
The discovery of a natural phenomenon unveils a curtain of ignorance from what has always existed. However, the creation of art requires the use of materials and knowledge combined with artistic inspiration to create a work of aesthetic appeal. By this

Frequency-Modulated Charge Pumping: Defect Measurements with High Gate Leakage

February 28, 2013
Author(s)
Jason T. Ryan, Richard G. Southwick, Jason P. Campbell, Kin P. Cheung, John S. Suehle, Anthony Oates
Charge pumping is one of the most relied upon techniques used to quantify interface defects in metal-oxide-semiconductor devices. However, conventional charge pumping is easily hindered by excessive gate leakage currents which render the technique

Organosilicate Polymer E-Beam Resists with High Resolution, Sensitivity and Stability

February 28, 2013
Author(s)
Christopher Soles, Richard Kasica, Hae-Jeong Lee, Jae H. Sim, Sung-Il Lee, Ki-Bum Kim, Hyun-Mi Kim, Do Y. Yoon
Hydrogen silsesquioxane (HSQ) is an attractive electron-beam (e-beam) resist for sub-20 nm lithography due to its high resolution, excellent line-edge-roughness (LER), and good plasma etch resistance. However, the sensitivity and long-term stability of HSQ

Frequency Dependent Charge Pumping -- A Defect Depth Profiling Tool?

January 31, 2013
Author(s)
Jason T. Ryan, Richard G. Southwick, Jason P. Campbell, Kin P. Cheung, John S. Suehle
We investigate the validity of using frequency-dependent charge pumping (FD-CP) to determine bulk defect depth distributions. Using simple physical arguments we conclude that: (1) the effective tunneling length to a bulk defect can be very different than

Gallium Nitride Nanowires for On-Chip Optical Interconnects on Ex-Situ Substrates

January 16, 2013
Author(s)
Matthew D. Brubaker, Paul T. Blanchard, John B. Schlager, Aric W. Sanders, Alexana Roshko, Shannon M. Duff, Jason Gray, Victor M. Bright, Norman A. Sanford, Kristine A. Bertness
In this letter we report on the fabrication, device characteristics, and optical coupling of a two-nanowire device comprising light-emitting diode and photoconductive GaN nanowires. Axial p-n junction GaN nanowires were grown by molecular beam epitaxy
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