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RADIO FREQUENCY, HIGH FREQUENCY, AND ANALOG/MIXED-SIGNAL TECHNOLOGIES: 2012 ITRS PERSPECTIVE

Published

Author(s)

Herbert S. Bennett, John J. Pekarik

Abstract

As compared to the scope of the RF and AMS International Technology Roadmap for Semiconductors (ITRS) Technical Working Group (ITWG) for the 2011 ITRS, the scope for the 2012 Update includes both wireless and tethered RF and AMS technologies. The requirements for transceiver ICs are technology drivers that contribute substantially to the recent ITRS-defined More-than-Moore (MtM) thrust. This 2012 ITRS RF and AMS Chapter Update is divided into the four analog-carrier frequency bands – low frequency (LF) 0.0 GHz – 0.4 GHz, radio frequency (RF) 0.4 GHz – 30 GHz, millimeter-wave (mm-wave) 30 GHz – 300 GHz, and terahertz (THz) greater than 300 GHz. Figure 1 lists a few examples of applications for each of these bands.
Citation
2012 ITRS Update

Keywords

field effect, bipolar. millimeter-wave, embedded, passive, and active devices, More-than-Moore, heterogeneous integration, compound semiconductors, microelecromechanical systems (MEMS), and complementary metal oxide semiconductors (CMOS).

Citation

Bennett, H. and Pekarik, J. (2013), RADIO FREQUENCY, HIGH FREQUENCY, AND ANALOG/MIXED-SIGNAL TECHNOLOGIES: 2012 ITRS PERSPECTIVE, 2012 ITRS Update (Accessed May 20, 2024)

Issues

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Created March 11, 2013, Updated October 1, 2018