Brubaker, M.
(2013),
Towards Discrete Axial p-n Junction Nanowire LEDs Grown by Plasma-Assisted MBE, Journal of Electronic Materials, [online], https://doi.org/10.1007/s11664-013-2498-y
(Accessed December 1, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Towards Discrete Axial p-n Junction Nanowire LEDs Grown by Plasma-Assisted MBE
Published
Author(s)
Abstract
In this paper we investigate axial p-n junction GaN nanowires grown by plasma-assisted MBE, with particular attention to the effect of Mg doping on the device characteristics of individual nanowire LEDs. We observe that single-nanowire LEDs produce measureable band-gap electroluminescence for a significant fraction of devices only when a thin AlGaN electron blocking layer is incorporated into the device structure near the junction. This observation and the low external quantum efficiency of the devices indicate that the primary non-radiative loss mechanism is the overflow of electrons from the n-type region through the p-type region and directly into the p-side contact. This effect is exacerbated by low p-type doping activity and Schottky-like contacts, which were confirmed by I-V measurements of the p-regions in junction nanowires as well as nanowires doped with Mg only. Our observations also show that diode-like I-V characteristics are observed even when an ideal p-n junction is absent.Citation
Journal of Electronic Materials
Volume
42
Pub Type
Journals
Download Paper
Keywords
Gallium Nitride, Nanowires, Molecular Beam Epitaxy, LEDs
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created March 6, 2013, Updated November 10, 2018