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Valence and Conduction Band Offsets of a ZrO2/SiOxNy/n-Si CMOS Gate Stack: A Combined Photoemission and Inverse Photoemission Study

Published

Author(s)

Safak Sayan, Robert A. Bartynski, Xin Zhao, Evgeni Gusev, David V. Vanderbilt, Mark Croft, M M. Banaszak-Holl, Eric Garfunkel
Citation
Physica Status Solidi
Volume
241
Issue
10

Citation

Sayan, S. , Bartynski, R. , Zhao, X. , Gusev, E. , Vanderbilt, D. , Croft, M. , Banaszak-Holl, M. and Garfunkel, E. (2004), Valence and Conduction Band Offsets of a ZrO2/SiOxNy/n-Si CMOS Gate Stack: A Combined Photoemission and Inverse Photoemission Study, Physica Status Solidi, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=906325 (Accessed June 14, 2024)

Issues

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Created April 2, 2004, Updated February 19, 2017