High Inversion Current in Silicon Nanowire Field Effect Transistors

Published

November 30, 2004

Author(s)

Sang-Mo Koo, Jin-Ping Han, Eric M. Vogel, Curt A. Richter, J. Vahakangas, Akira Fujiwara

Abstract

Silicon nanowire (SiNW) field effect transistors (FETs) with channel widths down to 20 nm have been fabricated by a conventional 'top-down?approach using electron-beam lithography. The SiNW device shows higher inversion channel current density than the control devices. The extracted average electron inversion mobility of the 20 nm-width nanowire channel (~960cm2/Vs) is found to be 1.7 times higher than that of the reference MOSFET (~580cm2/Vs) of large dimension (W>1'm), which we attribute to strain-induced change in the band structure of the SiNW after oxidation.

Citation

Nanotechnology

Volume

4

Issue

11

Pub Type

Journals

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Keywords

e-beam lithography, field-effect transistors, mobility, nanotechnology, scalable transistor, silicon nanowire

Citation

Koo, S. , Han, J. , Vogel, E. , Richter, C. , Vahakangas, J. and Fujiwara, A. (2004), High Inversion Current in Silicon Nanowire Field Effect Transistors, Nanotechnology, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=31760 (Accessed October 11, 2025)