Quantitative microscope characterization for parametric measurements with sub-nm parametric uncertainties

Published

September 23, 2013

Author(s)

Bryan M. Barnes, Jing Qin, Hui Zhou, Richard M. Silver

Abstract

Recently, a new technique called Fourier normalization has enabled the parametric fitting of optical images with multiple or even a continuum of spatial frequencies. Integral to the performance of this methodology is the characterization of the high magnification imaging microscope used in these experiments. Scatterfield microscopy techniques yield the necessary angular resolution required for determining the effects of the illumination and collection paths upon the electric field within the microscope. A multi-step characterization methodology is presented with experimental examples using a microscope operating at (lambda) = 450 nm. A prior scatterfield characterization technique for planar reflectors is reviewed and shown to be a special case of the newer generalized approach. Possible implications of this methodology for improved critical dimension measurements are assessed.

Proceedings Title

Instrumentation, Metrology, and Standards for Nanomanufacturing, Optics, and Semiconductors VII

Volume

8819

Conference Dates

August 25-29, 2013

Conference Location

San Diego, CA

Conference Title

SPIE Optics & Photonics 2013

Pub Type

Conferences

Download Paper

https://doi.org/10.1117/12.2027259

Keywords

scatterfield microscopy, tool characterization, critical dimension metrology, parametric fitting

Citation

Barnes, B. , Qin, J. , Zhou, H. and Silver, R. (2013), Quantitative microscope characterization for parametric measurements with sub-nm parametric uncertainties, Instrumentation, Metrology, and Standards for Nanomanufacturing, Optics, and Semiconductors VII, San Diego, CA, [online], https://doi.org/10.1117/12.2027259 (Accessed October 2, 2025)