Performance Analysis of 10 kV, 100 A SiC Half-Bridge Power Modules

Published

March 3, 2008

Author(s)

Allen R. Hefner Jr.

Abstract

Abstract: The DARPA Wide Bandgap Semiconductor Technology (WBGS) High Power Electronics (HPE) Phase II program is developing high-voltage, high-frequency SiC device and package technology needed to meet the specific program objectives for a 13.8 kV, 2.75 MVA Solid State Power Substation (SSPS) being developed by the DARPA WBGS-HPE Phase III program. In this paper, the performance of the HPE Phase II SiC device and package technology is eval((uated and a physics-based electro-thermal model is used to investigate the design trade-offs for 100 A, 10 kV SiC half-bridge power modules. This electro-thermal model is also used to demonstrate the expected performance of the half-bridge modules in a representative HPE Phase III SSPS topology.

Proceedings Title

GOMACTech-

Conference Dates

March 17-20, 2008

Conference Location

Las Vegas, NV

Conference Title

GOMACTech

Pub Type

Conferences

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Keywords

half-bridge power module, high-voltage, Junction Barrier Schottky (JBS), Keywords: Silicon carbide, MOSFET, power semiconductor, Solid State Power Substation.

Citation

Hefner, A. (2008), Performance Analysis of 10 kV, 100 A SiC Half-Bridge Power Modules, GOMACTech-, Las Vegas, NV, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32930 (Accessed October 22, 2025)