Skip to main content

NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.

Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.

U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Internal Photoemission Spectroscopy of [TaN/TaSiN] and [TaN/TaCN] Metal Stacks On SiO2 and [HfO2 / SiO2] Dielectric Stack.

Published

Author(s)

Nhan V. Nguyen, Hao Xiong, John S. Suehle, Oleg A. Kirillov, Eric Vogel, Prashant Majhi, Huang-Chun Wen

Abstract

Metal gates have been intensively searched to replace the poly-silicon for the next generation metal-oxide-semiconductor field-effect transistor. The barrier height (??0) at their interfaces with a gate dielectric must be known to select a suitable metal. In this letter, internal photoemission was used to determine ??0 of two important ternary metals: [TaN/TaSiN] and [TaN/TaCN] on a single SiO2 layer and a [HfO2/SiO2] stack. On SiO2, ??0 was found to be 3.36 eV and 3.55 eV at [TaN/TaSiN] stack] / SiO2 and [TaN/TaCN stack] / SiO2 interfaces, respectively. However, on the [HfO2/SiO2] stack, ??0 was found pinning at 2.5 eV. For comparisons, flat band voltage measurements will also be presented.
Citation
Applied Physics Letters
Volume
92

Keywords

C-V, Gate Dielectrics, HfO2, Interface Barrier Height, Internal Photoemission, Metat Gates, SiO2, TaCN, TaSiN

Citation

Nguyen, N. , Xiong, H. , Suehle, J. , Kirillov, O. , Vogel, E. , Majhi, P. and Wen, H. (2008), Internal Photoemission Spectroscopy of [TaN/TaSiN] and [TaN/TaCN] Metal Stacks On SiO2 and [HfO2 / SiO2] Dielectric Stack., Applied Physics Letters (Accessed October 1, 2025)

Issues

If you have any questions about this publication or are having problems accessing it, please contact [email protected].

Created March 6, 2008, Updated January 27, 2020
Was this page helpful?