STRESS-INDUCED DEFECT GENERATION IN HFO2/SIO2 STACKS OBSERVED BY USING CHARGE PUMPING AND LOW FREQUENCY NOISE MEASUREMENTS
Hao Xiong, Dawei Heh, Shuo Yang, Moshe Gurfinkel, Gennadi Bersuker, D. E. Ioannou, Curt A. Richter, Kin P. Cheung, John S. Suehle
A novel approach combining the low frequency drain current noise and the frequency-dependent charge pumping techniques has been employed to extract the trap densities in both the interfacial SiO2 layer and high-k layer in the n-type MOSFETs with HfO2/SiO2 stacks. It is found that positive bias stress creates more traps in the gate dielectric stack near the gate electrode while negative stress increases the share of traps generated in the proximity to the Si substrate. The results show that under electrical stress new traps are predominantly created close to the anode side and the degree of asymmetry is surprisingly large.
IEEE International Reliability Physics Symposium Proceedings
, Heh, D.
, Yang, S.
, Gurfinkel, M.
, Bersuker, G.
, Ioannou, D.
, Richter, C.
, Cheung, K.
and Suehle, J.
STRESS-INDUCED DEFECT GENERATION IN HFO2/SIO2 STACKS OBSERVED BY USING CHARGE PUMPING AND LOW FREQUENCY NOISE MEASUREMENTS, IEEE International Reliability Physics Symposium Proceedings, Phoenix, AZ, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32962
(Accessed March 4, 2024)