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STRESS-INDUCED DEFECT GENERATION IN HFO2/SIO2 STACKS OBSERVED BY USING CHARGE PUMPING AND LOW FREQUENCY NOISE MEASUREMENTS

Published

Author(s)

Hao Xiong, Dawei Heh, Shuo Yang, Moshe Gurfinkel, Gennadi Bersuker, D. E. Ioannou, Curt A. Richter, Kin P. Cheung, John S. Suehle

Abstract

A novel approach combining the low frequency drain current noise and the frequency-dependent charge pumping techniques has been employed to extract the trap densities in both the interfacial SiO2 layer and high-k layer in the n-type MOSFETs with HfO2/SiO2 stacks. It is found that positive bias stress creates more traps in the gate dielectric stack near the gate electrode while negative stress increases the share of traps generated in the proximity to the Si substrate. The results show that under electrical stress new traps are predominantly created close to the anode side and the degree of asymmetry is surprisingly large.
Proceedings Title
IEEE International Reliability Physics Symposium Proceedings
Conference Dates
April 27-May 1, 2008
Conference Location
Phoenix, AZ
Conference Title
International Reliability Physics Symposium

Keywords

Charge pumping, 1/f noise, oxide trap, defect generation, HfO2

Citation

Xiong, H. , Heh, D. , Yang, S. , Gurfinkel, M. , Bersuker, G. , Ioannou, D. , Richter, C. , Cheung, K. and Suehle, J. (2008), STRESS-INDUCED DEFECT GENERATION IN HFO2/SIO2 STACKS OBSERVED BY USING CHARGE PUMPING AND LOW FREQUENCY NOISE MEASUREMENTS, IEEE International Reliability Physics Symposium Proceedings, Phoenix, AZ, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32962 (Accessed March 4, 2024)
Created April 30, 2008, Updated February 19, 2017