Circuit Simulation Model for a 100 A, 10 kV Half-bridge SiC MOSFET/JBS Power Module
Tam H. Duong, Angel Rivera-Lopez, Allen R. Hefner Jr., Jose M. Ortiz
This paper presents the simulation of a 100 A, 10 kV Silicon Carbide (SiC) half-bridge power module operating at 20 kHz in a behavioral boost converter circuit. In the half-bridge module, 10 kV SiC power MOSFETs are used as the upper and lower switches, where 10 kV SiC Junction Barrier Schottky (JBS) anti-parallel diodes along with 100 V Silicon JBS series reverse-blocking diodes are used to protect the SiC MOSFETs from reverse conduction. The behavioral boost converter is designed to operate a single power switch and a single power diode for continuous 20 kHz hard switching conditions at 5 kV and 100 A. The test circuit contains the model for the 100A, 10 kV SiC half-bridge power module with the upper MOSFET gate turned off. The simulated waveforms demonstrate fast switch performance (<100 ns) with minimal turn-on current spikes resulting from charging the capacitances of the other MOSFET and JBS diodes in the module. The results also indicate that the combination of the 10 kV JBS anti-parallel diode along with the series low-voltage Silicon JBS reverse-blocking diode is effective in protecting the SiC MOSFETs from reverse conduction.
, Rivera-Lopez, A.
, Hefner Jr., A.
and Ortiz, J.
Circuit Simulation Model for a 100 A, 10 kV Half-bridge SiC MOSFET/JBS Power Module, Proc., Power Electronics Specialist Conference, Austin, TX, USA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32831
(Accessed January 25, 2022)