Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Evidence for an Indirect Gap in B−FeSi2 Epilayers by Photoreflectance Spectroscopy



Anthony Birdwell, Christopher Littler, R Glosser, M Rebien, W Henrion, P Stauss, G Behr


Photoreflectance spectra obtained from epitaxial films of semiconducting Β-FeSi2 exhibit complex line shapes resulting from a variety of optical transitions. While we have previously established a direct gap at 0.934{plus or minus}0.002 eV at 75 K, we find an additional weak structure at a lower energy. We attribute the origin of this spectral feature to indirect transitions assisted by the emission of a phonon. From our analysis, we determine an indirect gap energy of 0.823{plus or minus}0.002 eV at 75 K.
Applied Physics Letters


Birdwell, A. , Littler, C. , Glosser, R. , Rebien, M. , Henrion, W. , Stauss, P. and Behr, G. (2008), Evidence for an Indirect Gap in B−FeSi2 Epilayers by Photoreflectance Spectroscopy, Applied Physics Letters, [online], (Accessed June 21, 2024)


If you have any questions about this publication or are having problems accessing it, please contact

Created May 27, 2008, Updated February 19, 2017