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Evidence for an Indirect Gap in B−FeSi2 Epilayers by Photoreflectance Spectroscopy

Published

Author(s)

Anthony Birdwell, Christopher Littler, R Glosser, M Rebien, W Henrion, P Stauss, G Behr

Abstract

Photoreflectance spectra obtained from epitaxial films of semiconducting Β-FeSi2 exhibit complex line shapes resulting from a variety of optical transitions. While we have previously established a direct gap at 0.934{plus or minus}0.002 eV at 75 K, we find an additional weak structure at a lower energy. We attribute the origin of this spectral feature to indirect transitions assisted by the emission of a phonon. From our analysis, we determine an indirect gap energy of 0.823{plus or minus}0.002 eV at 75 K.
Citation
Applied Physics Letters
Volume
92
Issue
211901

Citation

Birdwell, A. , Littler, C. , Glosser, R. , Rebien, M. , Henrion, W. , Stauss, P. and Behr, G. (2008), Evidence for an Indirect Gap in B−FeSi2 Epilayers by Photoreflectance Spectroscopy, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=33076 (Accessed June 21, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created May 27, 2008, Updated February 19, 2017