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Negative-Bias Temperature Instability Induced Electron Trapping



Jason P. Campbell, Kin P. Cheung, John S. Suehle, A Oates


Despite four decades of research, the physics responsible for the negative bias temperature instability (NBTI) in p-channel metal-oxide-silicon field-effect-transistors is still unresolved. The current NBTI debate focuses on the dominance of either a hole trapping/de-trapping mechanism or hydrogen depassivation mechanism. In this study, we present NBTI-induced changes in the peak transconductance which indicate the presence of a third mechanism involving electron trapping/de-trapping. The presence of this electron trapping/de-trapping component adds further complexity to the very complicated NBTI phenomenon.
Applied Physics Letters


negative-bias temperature instability, electron trapping, hole trapping


Campbell, J. , Cheung, K. , Suehle, J. and Oates, A. (2008), Negative-Bias Temperature Instability Induced Electron Trapping, Applied Physics Letters, [online], (Accessed April 20, 2024)
Created July 21, 2008, Updated February 19, 2017