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Wear-out and Time Dependent Dielectric Breakdown in Silicon Oxides

Published

Author(s)

John S. Suehle

Abstract

This chapter will discuss the various physical mechanisms proposed for defect generation and dielectric breakdown in thin silicon dioxide films. Current understanding of the driving forces for defect generation will be presented as well as statistical models for describing the failure distributions observed after TDDB experiments. Finally, recent developments in ultra-thin dielectric breakdown, including soft breakdown and the power-law voltage acceleration model will be discussed.
Citation
Defects in Microelectronic Materials and Devices
Publisher Info
CRC Press, Boca Raton, FL

Keywords

breakdown, CMOS, dielectric, reliability

Citation

Suehle, J. (2009), Wear-out and Time Dependent Dielectric Breakdown in Silicon Oxides, CRC Press, Boca Raton, FL (Accessed February 24, 2024)
Created January 14, 2009, Updated January 27, 2020